A wideband 60 GHz LNA with 3.3 dB minimum noise figure

This work presents a 60 GHz two-stage low-noise amplifier (LNA) without the use of a base inductor. A common emitter (CE) stage followed by a cascode (CC) stage is chosen to achieve a low noise figure (NF) with high gain. The LNA is designed in the Jazz SBC18H3 process technology, exhibits 15 dB gain with a 3-dB bandwidth of 14 GHz (52–66 GHz), has a minimum NF of 3.3 dB and an input Pids of −13.5 dBm ±0.5 dB with 19.6 mW of power consumption. A detailed set of experiments are presented to eliminate the uncertainties and errors, such as ENR data and measurement components, in the noise figure measurement set-up at mm-wave frequencies.

[1]  D. Friedman,et al.  A 18mW, 3.3dB NF, 60GHz LNA in 32nm SOI CMOS technology with autonomic NF calibration , 2015, 2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).

[2]  Guo-Wei Huang,et al.  60GHz high-gain low-noise amplifiers with a common-gate inductive feedback in 65nm CMOS , 2011, 2011 IEEE Radio Frequency Integrated Circuits Symposium.

[3]  Gabriel M. Rebeiz,et al.  A 60 GHz single-chip 256-element wafer-scale phased array with EIRP of 45 dBm using sub-reticle stitching , 2015, 2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).

[4]  P. Schvan,et al.  Algorithmic Design of CMOS LNAs and PAs for 60-GHz Radio , 2007, IEEE Journal of Solid-State Circuits.

[5]  Huey-Ru Chuang,et al.  A 60-GHz high-gain, low-power, 3.7-dB noise-figure low-noise amplifier in 90-nm CMOS , 2013, 2013 European Microwave Conference.

[6]  Gabriel M. Rebeiz,et al.  45-nm CMOS SOI Technology Characterization for Millimeter-Wave Applications , 2014, IEEE Transactions on Microwave Theory and Techniques.

[7]  Corrado Carta,et al.  Millimeter-Wave Low-Noise Amplifier Design in 28-nm Low-Power Digital CMOS , 2015, IEEE Transactions on Microwave Theory and Techniques.