Breakdown Phenomena in Semiconductors And Semiconductor Devices

# Avalanche Multiplication # Static Avalanche Breakdown # Avalanche Injection # Dynamic Breakdown

[1]  H. Fritzsche Electronic Properties of Amorphous Semiconductors , 1974 .

[2]  C. Fazi,et al.  Positive temperature coefficient of breakdown voltage in 4H-SiC pn junction rectifiers , 1997, IEEE Electron Device Letters.

[3]  Q. Wahab,et al.  Ionization rates and critical fields in 4H silicon carbide , 1997 .

[4]  Kyuwoon Hwang,et al.  Second breakdown prediction by two-dimensonal numerical analysis of BJT turnoff , 1986, IEEE Transactions on Electron Devices.

[5]  H. J. Prager,et al.  High-power, high-efficiency silicon avalanche diodes at ultra high frequencies , 1967 .

[6]  M. Shur,et al.  Ballistic transport in semiconductor at low temperatures for low-power high-speed logic , 1979, IEEE Transactions on Electron Devices.

[7]  K. P. Lim,et al.  Time and real space dependence of impact ionization events in low noise impact avalanche transit time diodes , 2003 .

[8]  D. J. Bartelink,et al.  High-efficiency oscillations in germanium avalanche diodes below the transit-time frequency , 1968 .

[9]  F. Capasso The channeling avalanche photodiode: A novel ultra-low-noise interdigitated p-n junction detector , 1982, IEEE Transactions on Electron Devices.

[10]  I. V. Grekhov,et al.  High-power subnanosecond switch , 1981 .

[11]  V. Fock Zur Wärmetheorie des elektrischen Durchschlages , 1927 .

[12]  P A Tove,et al.  REVIEW ARTICLE: Methods of avoiding edge effects on semiconductor diodes , 1982 .

[13]  P. L. Hower,et al.  Avalanche injection and second breakdown in transistors , 1970 .

[14]  W. Shockley,et al.  Hot electrons in germanium and Ohm's law , 1951 .

[15]  R. C. Rustay,et al.  Theoretical basis for field calculations on multi-dimensional reverse biased semiconductor devices , 1982 .

[16]  B. Kerner,et al.  Dissipative Structures in Hot Electron-Hole Plasma of Hexagonal Silicon Carbide (α-SiC) , 1992 .

[17]  U. Lindefelt,et al.  Doping-induced effects on the band structure in n-type 3C-, 2H-, 4H-, 6H-SiC, and Si , 1999 .

[18]  M. Ohtomo Nucleation of High-Field Domains in n-GaAs , 1968 .

[19]  T. Misawa Chapter 7 Impatt Diodes , 1971 .

[20]  J. Kostamovaara,et al.  Multistreamer regime of GaAs thyristor switching , 1994 .

[21]  I. Šlaus,et al.  The effects of the neutron pickup process on 3He (p, pd)p quasi-free scattering , 1971 .

[22]  D. L. Scharfetter,et al.  Device physics of TRAPATT oscillators , 1970 .

[23]  William Shockley,et al.  The theory of p-n junctions in semiconductors and p-n junction transistors , 1949, Bell Syst. Tech. J..

[24]  H. W. Thim,et al.  Computer Study of Bulk GaAs Devices with Random One‐Dimensional Doping Fluctuations , 1968 .

[25]  Herbert Kroemer,et al.  Theory of the Gunn effect , 1964 .

[26]  M. Levinshtein,et al.  On the transport equations in popular commercial device simulators , 2002 .

[27]  H. W. Thim,et al.  Computer simulation of transferred electron devices using the displaced Maxwellian approach , 1974 .

[28]  R. Haitz,et al.  Model for the Electrical Behavior of a Microplasma , 1964 .

[29]  J. Gunn Microwave oscillations of current in III–V semiconductors , 1993 .

[30]  B. Hoefflinger High-frequency oscillations of p ++ -n + -n-n ++ avalanche diodes below the transit-time cutoff , 1966 .

[31]  Takao Kaneda,et al.  Chapter 3 Silicon and Germanium Avalanche Photodiodes , 1985 .

[32]  J. R. Hauser,et al.  The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries , 1964 .

[33]  B. Jalali,et al.  Transferred-electron induced current instabilities in heterojunction bipolar transistors , 1995 .

[34]  W. T. Read,et al.  A proposed high-frequency, negative-resistance diode , 1958 .

[35]  J. M. Nightingale,et al.  Sequential generation of binary orthogonal functions , 1971 .

[36]  A. S. Kyuregyan Fringing field of high-voltage planar p-i-n diodes with a nonuniformly doped guard ring , 2000 .

[37]  M. Shur,et al.  S-type current-voltage characteristic in Gunn diodes , 1973 .

[38]  A. Reklaitis,et al.  DIFFUSION COEFFICIENT OF HOT ELECTRONS IN GaAs , 1978 .

[39]  Michael S. Shur,et al.  Si, Ge, C (Diamond), GaAs, GaP, GaSb, InAs, InP, InSb , 1996 .

[40]  H. B. Grutchfield,et al.  Current mode second breakdown in epitaxial planar transistors , 1966 .

[41]  A. Herlet The forward characteristic of silicon power rectifiers at high current densities , 1968 .

[42]  J. Cornu,et al.  Field distribution near the surface of beveled P-N junctions in high-voltage devices , 1973 .

[43]  H. C. Bowers,et al.  Space-charge-induced negative resistance in avalanche diodes , 1968 .

[44]  Kunio Hane,et al.  Effect of Injected Current on Current-Mode Second Breakdown in Silicon PNN^+ Structure , 1975 .

[45]  Bantval J. Baliga,et al.  Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC , 1999 .

[46]  W. N. Grant Electron and hole ionization rates in epitaxial silicon at high electric fields , 1973 .

[47]  Willem Hundsdorfer,et al.  Superfast fronts of impact ionization in initially unbiased layered semiconductor structures , 2002 .

[48]  Kanad Mallik The theory of operation of transistorized Marx bank circuits. , 1999 .

[49]  P. Couvreur,et al.  Theoretical and experimental study of beveled thyristor structures , 1979 .

[50]  C. T. Kirk,et al.  A theory of transistor cutoff frequency (fT) falloff at high current densities , 1962, IRE Transactions on Electron Devices.

[51]  M. Anikin,et al.  Breakdown in Silicon Carbide pn Junctions , 1992 .

[52]  M. E. Levinshtein,et al.  Anode domain transient processes in supercritical Gunn diodes , 1984 .

[53]  V. L. Rideout,et al.  A review of the theory and technology for ohmic contacts to group III–V compound semiconductors , 1975 .

[54]  L. Loeb Ionizing Waves of Potential Gradient: Luminous pulses in electrical breakdown, with velocities a third that of light, have a common basis. , 1965, Science.

[55]  N. H. Fletcher,et al.  Some Aspects of the Design of Power Transistors , 1955, Proceedings of the IRE.

[56]  M. Tyagi,et al.  Zener and avalanche breakdown in silicon alloyed p-n junctions—I: Analysis of reverse characteristics☆ , 1968 .

[57]  T. T. Mnatsakanov,et al.  Investigation of the effect of electron-hole scattering on charge carrier transport in semiconductors and semiconductor devices under low injection conditions , 1995 .

[58]  W. Mönch,et al.  On the Physics of Avalanche Breakdown in Semiconductors , 1969 .

[59]  H. Thim,et al.  Observation of multiple high-field domains in n-GaAs , 1968 .

[60]  G. S. Kino,et al.  Transport Properties of GaAs , 1968 .

[61]  Sh. Kogan,et al.  Electronic noise and fluctuations in solids , 1996 .

[62]  C. Jacoboni,et al.  A review of some charge transport properties of silicon , 1977 .

[63]  Y. Mizushima,et al.  Properties of avalanche injection and its application to fast pulse generation and switching , 1967 .

[64]  T. Yamaoka,et al.  Low noise avalanche photodiodes by channeling of 800‐keV boron into 〈110〉 silicon , 1978 .

[65]  Robert Mertens,et al.  Heavy doping effects in silicon , 1987 .

[66]  C. R. Crowell,et al.  Temperature dependence of avalanche multiplication in semiconductors , 1966 .

[67]  R. Mcintyre Multiplication noise in uniform avalanche diodes , 1966 .

[68]  R. J. McIntyre,et al.  Theory of Microplasma Instability in Silicon , 1961 .

[69]  P. Mars,et al.  Temperature dependence of avalanche breakdown voltage Temperature dependence of avalanche breakdown voltage in p—n junctions† , 1972 .

[70]  P. Rodin,et al.  Transverse stability of an impact-ionization front in a Si p+-n-n+ structure , 1997 .

[71]  C. Hilsum,et al.  A simple analysis of stable domain propagation in the Gunn effect , 1966 .

[72]  C. Sah,et al.  Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics , 1957, Proceedings of the IRE.

[73]  Thomas P. Pearsall,et al.  The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs , 1978 .

[74]  A. Goetzberger,et al.  Avalanche Effects in Silicon p—n Junctions. II. Structurally Perfect Junctions , 1963 .

[75]  Sir Nevill Mott,et al.  The mechanism of threshold switching in amorphous alloys , 1978 .

[76]  M. Shur Maximum electric field in high-field domain , 1978 .

[77]  Superfast high-current switching of GaAs avalanche transistor , 2004 .

[78]  A. Reklaitis High field electron diffusion in Indium antimonide , 1977 .

[79]  P. A. Wolff,et al.  Theory of Electron Multiplication in Silicon and Germanium , 1954 .

[80]  H. Gummel,et al.  Large-signal analysis of a silicon Read diode oscillator , 1969 .

[81]  P. Southgate,et al.  Stimulated emission in field-ionized bulk InP , 1968 .

[82]  A. G. Jordan,et al.  The static and dynamic properties of the avalanche injection diode , 1963 .

[83]  C. Wright,et al.  Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices , 2004 .

[84]  Qamar Ul Wahab,et al.  Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide , 1998 .

[85]  A. Konstantinov The Temperature Dependence of Impact Ionization in Silicon Carbide, and Related Effects , 1992 .

[86]  M. Mikhailova,et al.  Impact ionization in AIIIBV semiconductors in high electric fields , 1987 .

[87]  M. Poleshuk,et al.  Microplasma Breakdown in Germanium , 1963 .

[88]  T. Maloney,et al.  Transient and steady‐state electron transport properties of GaAs and InP , 1977 .

[89]  K. Brennan,et al.  Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN , 1997 .

[90]  D. E. Iglesias,et al.  High-efficiency CW impatt operation , 1968 .

[91]  Juha Kostamovaara,et al.  Properties of the transient of avalanche transistor switching at extreme current densities , 2002 .

[92]  D. Stolnitz Experimental demonstration and theory of a corrective to second breakdown in Si power transistors , 1966 .

[93]  I. V. Grekhov,et al.  Tunneling-assisted impact ionization fronts in semiconductors , 2001 .

[94]  F. E. Gentry,et al.  Control of electric fields at the surface of p-n junctions , 1963 .

[95]  Paolo Spirito,et al.  Negative resistance induced by avalanche injection in bulk semiconductors , 1974 .

[96]  J. S. Heeks Some properties of the moving high-field domain in Gunn effect devices , 1966 .

[97]  Osamu Mikami,et al.  Crystal orientation dependence of ionization rates in germanium , 1980 .

[98]  J. Kostamovaara,et al.  Avalanche transistor operation at extreme currents: physical reasons for low residual voltages , 2003 .

[99]  H. Egawa,et al.  Avalanche characteristics and failure mechanism of high voltage diodes , 1966 .

[100]  Joe C. Campbell,et al.  GaN avalanche photodiodes , 2000 .

[101]  S. Ramo Currents Induced by Electron Motion , 1939, Proceedings of the IRE.

[102]  W. Shockley Problems related to p-n junctions in silicon , 1961 .

[103]  Jian H. Zhao,et al.  Demonstration of the first 4H-SiC avalanche photodiodes , 2000 .

[104]  R. J. Nienhuis Second breakdown in the forward and reverse base current region , 1966 .

[105]  Peter A. Houston,et al.  Electron drift velocity in n-GaAs at high electric fields , 1977 .

[106]  W. Maes,et al.  Impact ionization in silicon: A review and update , 1990 .

[107]  P. Southgate LASER ACTION IN FIELD‐IONIZED BULK GaAs , 1968 .

[108]  D. Tremere,et al.  Current gain and cutoff frequency falloff at high currents , 1969 .

[109]  P. Guétin Contribution to the experimental study of the Gunn effect in long GaAs samples , 1967 .

[110]  R. B. Emmons,et al.  Avalanche‐Photodiode Frequency Response , 1967 .

[111]  P. Southgate Stimulated emission from bulk field-ionized GaAs , 1968 .

[112]  P. Southgate Recombination Processes following Impact Ionization by High‐Field Domains in Gallium Arsenide , 1967 .

[113]  Juha Kostamovaara,et al.  Picosecond range switching of a GaAs avalanche transistor due to bulk carrier generation by avalanching Gunn domains , 2004, SPIE OPTO.

[114]  G. D. Bergman The gate-triggered turn-on process in thyristors , 1965 .

[115]  P. Williams,et al.  Two‐dimensional studies of streamers in gases , 1987 .

[116]  J. B. Gunn,et al.  Instabilities of Current in III-V Semiconductors , 1964, IBM J. Res. Dev..

[117]  T. Kaneda,et al.  Avalanche Built-Up Time of the Germanium Avalanche Photodiode , 1973 .