Breakdown Phenomena in Semiconductors And Semiconductor Devices
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Juha Kostamovaara | Sergey N. Vainshtein | Michael E. Levinshtein | M. Levinshtein | J. Kostamovaara | S. Vainshtein
[1] H. Fritzsche. Electronic Properties of Amorphous Semiconductors , 1974 .
[2] C. Fazi,et al. Positive temperature coefficient of breakdown voltage in 4H-SiC pn junction rectifiers , 1997, IEEE Electron Device Letters.
[3] Q. Wahab,et al. Ionization rates and critical fields in 4H silicon carbide , 1997 .
[4] Kyuwoon Hwang,et al. Second breakdown prediction by two-dimensonal numerical analysis of BJT turnoff , 1986, IEEE Transactions on Electron Devices.
[5] H. J. Prager,et al. High-power, high-efficiency silicon avalanche diodes at ultra high frequencies , 1967 .
[6] M. Shur,et al. Ballistic transport in semiconductor at low temperatures for low-power high-speed logic , 1979, IEEE Transactions on Electron Devices.
[7] K. P. Lim,et al. Time and real space dependence of impact ionization events in low noise impact avalanche transit time diodes , 2003 .
[8] D. J. Bartelink,et al. High-efficiency oscillations in germanium avalanche diodes below the transit-time frequency , 1968 .
[9] F. Capasso. The channeling avalanche photodiode: A novel ultra-low-noise interdigitated p-n junction detector , 1982, IEEE Transactions on Electron Devices.
[10] I. V. Grekhov,et al. High-power subnanosecond switch , 1981 .
[11] V. Fock. Zur Wärmetheorie des elektrischen Durchschlages , 1927 .
[12] P A Tove,et al. REVIEW ARTICLE: Methods of avoiding edge effects on semiconductor diodes , 1982 .
[13] P. L. Hower,et al. Avalanche injection and second breakdown in transistors , 1970 .
[14] W. Shockley,et al. Hot electrons in germanium and Ohm's law , 1951 .
[15] R. C. Rustay,et al. Theoretical basis for field calculations on multi-dimensional reverse biased semiconductor devices , 1982 .
[16] B. Kerner,et al. Dissipative Structures in Hot Electron-Hole Plasma of Hexagonal Silicon Carbide (α-SiC) , 1992 .
[17] U. Lindefelt,et al. Doping-induced effects on the band structure in n-type 3C-, 2H-, 4H-, 6H-SiC, and Si , 1999 .
[18] M. Ohtomo. Nucleation of High-Field Domains in n-GaAs , 1968 .
[19] T. Misawa. Chapter 7 Impatt Diodes , 1971 .
[20] J. Kostamovaara,et al. Multistreamer regime of GaAs thyristor switching , 1994 .
[21] I. Šlaus,et al. The effects of the neutron pickup process on 3He (p, pd)p quasi-free scattering , 1971 .
[22] D. L. Scharfetter,et al. Device physics of TRAPATT oscillators , 1970 .
[23] William Shockley,et al. The theory of p-n junctions in semiconductors and p-n junction transistors , 1949, Bell Syst. Tech. J..
[24] H. W. Thim,et al. Computer Study of Bulk GaAs Devices with Random One‐Dimensional Doping Fluctuations , 1968 .
[25] Herbert Kroemer,et al. Theory of the Gunn effect , 1964 .
[26] M. Levinshtein,et al. On the transport equations in popular commercial device simulators , 2002 .
[27] H. W. Thim,et al. Computer simulation of transferred electron devices using the displaced Maxwellian approach , 1974 .
[28] R. Haitz,et al. Model for the Electrical Behavior of a Microplasma , 1964 .
[29] J. Gunn. Microwave oscillations of current in III–V semiconductors , 1993 .
[30] B. Hoefflinger. High-frequency oscillations of p ++ -n + -n-n ++ avalanche diodes below the transit-time cutoff , 1966 .
[31] Takao Kaneda,et al. Chapter 3 Silicon and Germanium Avalanche Photodiodes , 1985 .
[32] J. R. Hauser,et al. The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries , 1964 .
[33] B. Jalali,et al. Transferred-electron induced current instabilities in heterojunction bipolar transistors , 1995 .
[34] W. T. Read,et al. A proposed high-frequency, negative-resistance diode , 1958 .
[35] J. M. Nightingale,et al. Sequential generation of binary orthogonal functions , 1971 .
[36] A. S. Kyuregyan. Fringing field of high-voltage planar p-i-n diodes with a nonuniformly doped guard ring , 2000 .
[37] M. Shur,et al. S-type current-voltage characteristic in Gunn diodes , 1973 .
[38] A. Reklaitis,et al. DIFFUSION COEFFICIENT OF HOT ELECTRONS IN GaAs , 1978 .
[39] Michael S. Shur,et al. Si, Ge, C (Diamond), GaAs, GaP, GaSb, InAs, InP, InSb , 1996 .
[40] H. B. Grutchfield,et al. Current mode second breakdown in epitaxial planar transistors , 1966 .
[41] A. Herlet. The forward characteristic of silicon power rectifiers at high current densities , 1968 .
[42] J. Cornu,et al. Field distribution near the surface of beveled P-N junctions in high-voltage devices , 1973 .
[43] H. C. Bowers,et al. Space-charge-induced negative resistance in avalanche diodes , 1968 .
[44] Kunio Hane,et al. Effect of Injected Current on Current-Mode Second Breakdown in Silicon PNN^+ Structure , 1975 .
[45] Bantval J. Baliga,et al. Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC , 1999 .
[46] W. N. Grant. Electron and hole ionization rates in epitaxial silicon at high electric fields , 1973 .
[47] Willem Hundsdorfer,et al. Superfast fronts of impact ionization in initially unbiased layered semiconductor structures , 2002 .
[48] Kanad Mallik. The theory of operation of transistorized Marx bank circuits. , 1999 .
[49] P. Couvreur,et al. Theoretical and experimental study of beveled thyristor structures , 1979 .
[50] C. T. Kirk,et al. A theory of transistor cutoff frequency (fT) falloff at high current densities , 1962, IRE Transactions on Electron Devices.
[51] M. Anikin,et al. Breakdown in Silicon Carbide pn Junctions , 1992 .
[52] M. E. Levinshtein,et al. Anode domain transient processes in supercritical Gunn diodes , 1984 .
[53] V. L. Rideout,et al. A review of the theory and technology for ohmic contacts to group III–V compound semiconductors , 1975 .
[54] L. Loeb. Ionizing Waves of Potential Gradient: Luminous pulses in electrical breakdown, with velocities a third that of light, have a common basis. , 1965, Science.
[55] N. H. Fletcher,et al. Some Aspects of the Design of Power Transistors , 1955, Proceedings of the IRE.
[56] M. Tyagi,et al. Zener and avalanche breakdown in silicon alloyed p-n junctions—I: Analysis of reverse characteristics☆ , 1968 .
[57] T. T. Mnatsakanov,et al. Investigation of the effect of electron-hole scattering on charge carrier transport in semiconductors and semiconductor devices under low injection conditions , 1995 .
[58] W. Mönch,et al. On the Physics of Avalanche Breakdown in Semiconductors , 1969 .
[59] H. Thim,et al. Observation of multiple high-field domains in n-GaAs , 1968 .
[60] G. S. Kino,et al. Transport Properties of GaAs , 1968 .
[61] Sh. Kogan,et al. Electronic noise and fluctuations in solids , 1996 .
[62] C. Jacoboni,et al. A review of some charge transport properties of silicon , 1977 .
[63] Y. Mizushima,et al. Properties of avalanche injection and its application to fast pulse generation and switching , 1967 .
[64] T. Yamaoka,et al. Low noise avalanche photodiodes by channeling of 800‐keV boron into 〈110〉 silicon , 1978 .
[65] Robert Mertens,et al. Heavy doping effects in silicon , 1987 .
[66] C. R. Crowell,et al. Temperature dependence of avalanche multiplication in semiconductors , 1966 .
[67] R. Mcintyre. Multiplication noise in uniform avalanche diodes , 1966 .
[68] R. J. McIntyre,et al. Theory of Microplasma Instability in Silicon , 1961 .
[69] P. Mars,et al. Temperature dependence of avalanche breakdown voltage Temperature dependence of avalanche breakdown voltage in p—n junctions† , 1972 .
[70] P. Rodin,et al. Transverse stability of an impact-ionization front in a Si p+-n-n+ structure , 1997 .
[71] C. Hilsum,et al. A simple analysis of stable domain propagation in the Gunn effect , 1966 .
[72] C. Sah,et al. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics , 1957, Proceedings of the IRE.
[73] Thomas P. Pearsall,et al. The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs , 1978 .
[74] A. Goetzberger,et al. Avalanche Effects in Silicon p—n Junctions. II. Structurally Perfect Junctions , 1963 .
[75] Sir Nevill Mott,et al. The mechanism of threshold switching in amorphous alloys , 1978 .
[76] M. Shur. Maximum electric field in high-field domain , 1978 .
[77] Superfast high-current switching of GaAs avalanche transistor , 2004 .
[78] A. Reklaitis. High field electron diffusion in Indium antimonide , 1977 .
[79] P. A. Wolff,et al. Theory of Electron Multiplication in Silicon and Germanium , 1954 .
[80] H. Gummel,et al. Large-signal analysis of a silicon Read diode oscillator , 1969 .
[81] P. Southgate,et al. Stimulated emission in field-ionized bulk InP , 1968 .
[82] A. G. Jordan,et al. The static and dynamic properties of the avalanche injection diode , 1963 .
[83] C. Wright,et al. Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices , 2004 .
[84] Qamar Ul Wahab,et al. Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide , 1998 .
[85] A. Konstantinov. The Temperature Dependence of Impact Ionization in Silicon Carbide, and Related Effects , 1992 .
[86] M. Mikhailova,et al. Impact ionization in AIIIBV semiconductors in high electric fields , 1987 .
[87] M. Poleshuk,et al. Microplasma Breakdown in Germanium , 1963 .
[88] T. Maloney,et al. Transient and steady‐state electron transport properties of GaAs and InP , 1977 .
[89] K. Brennan,et al. Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN , 1997 .
[90] D. E. Iglesias,et al. High-efficiency CW impatt operation , 1968 .
[91] Juha Kostamovaara,et al. Properties of the transient of avalanche transistor switching at extreme current densities , 2002 .
[92] D. Stolnitz. Experimental demonstration and theory of a corrective to second breakdown in Si power transistors , 1966 .
[93] I. V. Grekhov,et al. Tunneling-assisted impact ionization fronts in semiconductors , 2001 .
[94] F. E. Gentry,et al. Control of electric fields at the surface of p-n junctions , 1963 .
[95] Paolo Spirito,et al. Negative resistance induced by avalanche injection in bulk semiconductors , 1974 .
[96] J. S. Heeks. Some properties of the moving high-field domain in Gunn effect devices , 1966 .
[97] Osamu Mikami,et al. Crystal orientation dependence of ionization rates in germanium , 1980 .
[98] J. Kostamovaara,et al. Avalanche transistor operation at extreme currents: physical reasons for low residual voltages , 2003 .
[99] H. Egawa,et al. Avalanche characteristics and failure mechanism of high voltage diodes , 1966 .
[100] Joe C. Campbell,et al. GaN avalanche photodiodes , 2000 .
[101] S. Ramo. Currents Induced by Electron Motion , 1939, Proceedings of the IRE.
[102] W. Shockley. Problems related to p-n junctions in silicon , 1961 .
[103] Jian H. Zhao,et al. Demonstration of the first 4H-SiC avalanche photodiodes , 2000 .
[104] R. J. Nienhuis. Second breakdown in the forward and reverse base current region , 1966 .
[105] Peter A. Houston,et al. Electron drift velocity in n-GaAs at high electric fields , 1977 .
[106] W. Maes,et al. Impact ionization in silicon: A review and update , 1990 .
[107] P. Southgate. LASER ACTION IN FIELD‐IONIZED BULK GaAs , 1968 .
[108] D. Tremere,et al. Current gain and cutoff frequency falloff at high currents , 1969 .
[109] P. Guétin. Contribution to the experimental study of the Gunn effect in long GaAs samples , 1967 .
[110] R. B. Emmons,et al. Avalanche‐Photodiode Frequency Response , 1967 .
[111] P. Southgate. Stimulated emission from bulk field-ionized GaAs , 1968 .
[112] P. Southgate. Recombination Processes following Impact Ionization by High‐Field Domains in Gallium Arsenide , 1967 .
[113] Juha Kostamovaara,et al. Picosecond range switching of a GaAs avalanche transistor due to bulk carrier generation by avalanching Gunn domains , 2004, SPIE OPTO.
[114] G. D. Bergman. The gate-triggered turn-on process in thyristors , 1965 .
[115] P. Williams,et al. Two‐dimensional studies of streamers in gases , 1987 .
[116] J. B. Gunn,et al. Instabilities of Current in III-V Semiconductors , 1964, IBM J. Res. Dev..
[117] T. Kaneda,et al. Avalanche Built-Up Time of the Germanium Avalanche Photodiode , 1973 .