论文信息 - Low-temperature Pd direct bonding and electrical transport across InP-Pd-GaAs interfaces

Low-temperature Pd direct bonding and electrical transport across InP-Pd-GaAs interfaces

We have developed a low-temperature Pd bonding to integrate InP material with the GaAs substrate. The solid state reactions of Pd with both InP and GaAs allows Pd to be used as a sandwiched ohmic contact between two dissimilar materials. The InP-Pd-GaAs interfaces have been characterized by scanning electron microscopy, optical reflectance, and electrical transport.<<ETX>>

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