An improved description of the dielectric breakdown in oxides based on a generalized Weibull distribution
暂无分享,去创建一个
S. Picoli | V. N. Freire | E. F. da Silva | L. C. Malacarne | R. S. Mendes | U. M. S. Costa | Jr | Jr. | E. A. de Vasconcelos
[1] D. Muller,et al. The electronic structure at the atomic scale of ultrathin gate oxides , 1999, Nature.
[2] A percolation based dielectric breakdown model with randomic changes in the dielectric constant , 2002 .
[3] C. Tsallis. Possible generalization of Boltzmann-Gibbs statistics , 1988 .
[4] H. Umeda,et al. Time-dependent dielectric breakdown of SiO2 films in a wide electric field range , 2001, Microelectron. Reliab..
[5] Christian Beck. Dynamical Foundations of Nonextensive Statistical Mechanics , 2001 .
[6] Włodarczyk,et al. Interpretation of the nonextensivity parameter q in some applications of tsallis statistics and Levy distributions , 2000, Physical review letters.
[7] R. Wallace,et al. High-κ gate dielectrics: Current status and materials properties considerations , 2001 .
[8] C. Tsallis,et al. The role of constraints within generalized nonextensive statistics , 1998 .
[9] R. Degraeve,et al. Reliability: a possible showstopper for oxide thickness scaling? , 2000 .
[10] R. S. Mendes,et al. q-exponential, Weibull, and q-Weibull distributions: an empirical analysis , 2003, cond-mat/0301552.
[11] J. Aguiar,et al. Growth kinetics of thermal SiO2 thin films , 1995 .
[12] B. Gnedenko,et al. Random Summation: Limit Theorems and Applications , 1996 .
[13] R. Mckee,et al. Physical structure and inversion charge at a semiconductor interface with a crystalline oxide. , 2001, Science.
[14] L. Pietronero,et al. Fractal Dimension of Dielectric Breakdown , 1984 .
[15] New approach to the probabilistic-statistical analysis of turbulent transport processes in plasma , 2002 .
[16] H. R. Zeller,et al. A fractal model of dielectric breakdown and prebreakdown in solid dielectrics , 1986 .
[17] R. Mckee,et al. Crystalline Oxides on Silicon: The First Five Monolayers , 1998 .
[18] V. Fiorentini,et al. Theoretical evaluation of zirconia and hafnia as gate oxides for si microelectronics. , 2002, Physical review letters.
[19] J. Stathis,et al. Ultra-thin oxide reliability for ULSI applications , 2000 .
[20] Guido Groeseneken,et al. Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction , 1999 .
[21] Mark L. Green,et al. Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits , 2001 .