Analysis of bulk and facet failures in AlGaAs-based high-power diode lasers

Mechanisms are addressed limiting the reliability high-power diode lasers. An overview is given on the kinetics of the Catastrophic Optical Damage (COD) process, which is related to highest output powers. It involves fast defect growth fed by re-absorption of laser light. Local temperatures reach the order of the melting temperature of the waveguide of the device. The process starts either at a facet or at any weak point, e.g., at extended defects in the interior of the cavity.

[1]  L. M. Foster,et al.  Thermodynamic Analysis of the III–V Alloy Semiconductor Phase Diagrams III . The Solidus Boundary in the Pseudobinary System , 1972 .

[2]  P. G. Eliseev,et al.  Degradation of injection lasers , 1973 .

[3]  C. Henry,et al.  Catastrophic damage of AlxGa1−xAs double‐heterostructure laser material , 1979 .

[4]  W. Nakwaski.  Thermal analysis of the catastrophic mirror damage in laser diodes , 1985 .

[5]  D. Webb,et al.  Thermodynamics approach to catastrophic optical mirror damage of AlGaAs single quantum well lasers , 1989 .

[6]  W. Nakwaski.  Three-dimensional time-dependent thermal model of catastrophic mirror damage in stripe-geometry double-heterostructure GaAs/(AlGa)As diode lasers , 1989 .

[7]  Wlodzimierz Nakwaski,et al.  Thermal model of the catastrophic degradation of high-power stripe-geometry GaAs/(AlGa)As double-heterostructure diode lasers , 1990 .

[8]  A. Moser,et al.  Arrhenius parameters for the rate process leading to catastrophic damage of AlGaAs‐GaAs laser facets , 1992 .

[9]  R. A. Logan,et al.  Catastrophic degradation lines at the facet of InGaAsP/InP lasers investigated by transmission electron microscopy , 1995 .

[10]  Robert E. Mallard,et al.  EBIC and TEM analysis of catastrophic optical damage in high-power GaAlAs/GaInAs lasers , 1997, Photonics West.

[11]  U. Menzel,et al.  Self-consistent calculation of facet heating in asymmetrically coated edge emitting diode lasers , 1998 .

[12]  M. Baeumler,et al.  Optical and structural analysis of degraded high power InGaAlAs/AlGaAs lasers , 1999 .

[13]  W. R. Smitha.  Mathematical modeling of thermal runaway in semiconductor laser operation , 2000 .

[14]  Wolfgang Schmid,et al.  Investigation of dark line defects induced by catastrophic optical damage in broad-area AlGaInP laser diodes , 2006 .

[15]  James G. Ho,et al.  Three-dimensional failure analysis of high power semiconductor laser diodes operated in vacuum , 2007 .

[16]  J. Tomm,et al.  Temperature-power dependence of catastrophic optical damage in AlGaInP laser diodes , 2007 .

[17]  Yongkun Sin,et al.  Investigation of Catastrophic Optical Mirror Damage in High Power Single-Mode InGaAs-AlGaAs Strained Quantum Well Lasers with Focused Ion Beam and HR-TEM Techniques , 2007, 2007 Conference on Lasers and Electro-Optics (CLEO).

[18]  B. Sumpf,et al.  Gradual degradation of red-emitting high-power diode laser bars , 2007 .

[19]  J. Tomm,et al.  Defect investigation and temperature analysis of high-power AlGaInP laser diodes during catastrophic optical damage , 2008 .

[20]  Aland K. Chin,et al.  A comprehensive model of catastrophic optical-damage in broad-area laser diodes , 2009, LASE.

[21]  Aland K. Chin,et al.  Fault protection of broad-area laser diodes , 2009, LASE.

[22]  Nathan Presser,et al.  Catastrophic facet and bulk degradation in high power multi-mode InGaAs strained quantum well single emitters , 2009, LASE.

[23]  Thomas Elsaesser,et al.  Catastrophic optical damage at front and rear facets of diode lasers , 2010 .

[24]  Thomas Elsaesser,et al.  Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage , 2010 .

[25]  Paul Crump,et al.  Root-Cause Analysis of Peak Power Saturation in Pulse-Pumped 1100 nm Broad Area Single Emitter Diode Lasers , 2010, IEEE Journal of Quantum Electronics.

[26]  D. Miftakhutdinov,et al.  Catastrophic optical degradation of the output facet of high-power single-transverse-mode diode lasers. 2. Calculation of the spatial temperature distribution and threshold of the catastrophic optical degradation , 2010 .

[27]  Thomas Elsaesser,et al.  Time-resolved analysis of catastrophic optical damage in 975 nm emitting diode lasers , 2010 .

[28]  Peter Michael Smowton,et al.  Time resolved studies of catastrophic optical mirror damage in red-emitting laser diodes , 2010 .

[29]  Thomas Elsaesser,et al.  Catastrophic optical mirror damage in diode lasers monitored during single pulse operation , 2010, OPTO.

[30]  Thomas Elsaesser,et al.  Near-field dynamics of broad area diode laser at very high pump levels , 2011 .

[31]  Thomas Elsaesser,et al.  Defect evolution during catastrophic optical damage of diode lasers , 2011 .

[32]  Thomas Elsaesser,et al.  High single-spatial-mode pulsed power from 980 nm emitting diode lasers , 2012 .

[33]  T. Elsaesser,et al.  Time‐resolved reconstruction of defect creation sequences in diode lasers , 2012 .

[34]  Thomas Elsaesser,et al.  Near-field characteristics of broad area diode lasers during catastrophic optical damage failure , 2012, Photonics Europe.

[35]  U. Zeimer,et al.  Catastrophic optical bulk damage in InP 7xx emitting quantum dot diode lasers , 2012 .

[36]  J. W. Tomm,et al.  Microscopic Origins of Catastrophic Optical Damage in Diode Lasers , 2013, IEEE Journal of Selected Topics in Quantum Electronics.

[37]  U. Zeimer,et al.  How does external feedback cause AlGaAs-based diode lasers to degrade? , 2013 .