Nonlinear thermal characteristics of silicon carbide devices

In the paper, the dynamic nonlinear model of SiC devices is proposed, where the dependencies of the thermal parameters on the temperature are included. The proposed model is applicable and useful in the simulations of electro-thermal transients in the devices working with high power density and in the wide range of temperature.

[1]  M. Rencz,et al.  Studies on the nonlinearity effects in dynamic compact model generation of packages , 2004, IEEE Transactions on Components and Packaging Technologies.

[2]  K. Sheng,et al.  Junction temperature dynamics of power MOSFET and SiC diode , 2009, 2009 IEEE 6th International Power Electronics and Motion Control Conference.

[3]  Yasushi Yamada,et al.  Novel Electro-Thermal Coupling Simulation Technique for Dynamic Analysis of HV (Hybrid Vehicle) Inverter , 2006 .

[4]  H. Mehling,et al.  Determination of the thermal diffusivity and conductivity of monocrystalline silicon carbide (300-2300 K) , 1997 .

[5]  J. Korvink,et al.  Compact electro-thermal model of semiconductor device with nonlinear convection coefficient , 2005, EuroSimE 2005. Proceedings of the 6th International Conference on Thermal, Mechanial and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2005..

[6]  K. Sheng,et al.  Maximum Junction Temperatures of SiC Power Devices , 2009 .