论文信息 - Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator - 字舞流文

Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator

M. Urteaga | D. Antoniadis | Daehyun Kim | J. Alamo | J. Kuo | Y. Kao | Tae-Woo Kim | B. Brar | J. Li | P. Chen | P. Pinsukanjana | C. King | E. Regan | A. Papavasiliou