Room temperature GaAs exciton-polariton light emitting diode

Room temperature GaAs polariton emission is demonstrated under electrical injection. Temperature and angle-resolved electroluminescence measurements on a polariton light emitting diode clearly show the persistence of Rabi splitting and anticrossing behavior at temperatures as high as 315 K. We show that by increasing the number of quantum wells in the structure, the cutoff temperature for the strong coupling regime can be pushed beyond room temperature, in good agreement with theory. Our results suggest that optimally designed GaAs microcavities are perfectly suited for room temperature polaritronics.

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