Temperature Dependence of the Fundamental Absorption Edge in CuGaSe2

From the study of the temperature dependence of the optical absorption spectra, the energy gap EG of CuIn3Se5 between 10 and 300 K are calculated using the model proposed by Elliot. This variation is compared to the semiempirical relation suggested by Manoogian–Woolley. The Debye temperature ΘD, the dielectric constant e0, and the effective masses of free excitons mex, electrons me, and holes mh are estimated from the analysis of the adjustable parameters of these models.

[1]  C. Rincón,et al.  On the Dielectric Constants of AIBIIIC2VI Chalcopyrite Semiconductor Compounds , 1995 .

[2]  N. Kohara,et al.  Preparation and characterization of Cu(In1−xGax)3Se5 thin films , 1995 .

[3]  A. Rockett,et al.  The growth by the hybrid sputtering and evaporation method and microstructural studies of CuInSe2 films , 1995 .

[4]  S. Asher,et al.  Accelerated publication 16.4% total‐area conversion efficiency thin‐film polycrystalline MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell , 1994 .

[5]  N. Kohara,et al.  Preparation of Ordered Vacancy Chalcopyrite-Type CuIn3Se5 Thin Films , 1994 .

[6]  A. Rockett,et al.  Structural, optical, and electrical properties of epitaxial chalcopyrite CuIn3Se5 films , 1994 .

[7]  A. Nelson,et al.  Ordered vacancy compound CuIn3Se5 on GaAs (100): Epitaxial growth and characterization , 1994 .

[8]  D. Schmid,et al.  Chalcopyrite/defect chalcopyrite heterojunctions on the basis of CuInSe2 , 1993 .

[9]  C. Rincón Deby Temperature and Melting Point in AIBIIIC2VI and AIIBIVC2V Chalcopyrite Compounds , 1992 .

[10]  Robert W. Birkmire,et al.  CuInSe2 for photovoltaic applications , 1991 .

[11]  J. Woolley,et al.  Optical energy‐gap variation and deformation potentials in CuInTe2 , 1991 .

[12]  R. Noufi,et al.  Thoughts on the microstructure of polycrystalline thin film CuInSe2 and its impact on material and device performance , 1991 .

[13]  S. Wasim,et al.  Sound Velocities and Elastic Moduli in CuInTe2 and CuInSe2 , 1990 .

[14]  J. González,et al.  Optical absorption and phase transitions in Cu-III-VI2 compound semiconductors at high pressure , 1990 .

[15]  J. González,et al.  Analysis of direct exciton transitions in CuGa(SxSe1−x)2 alloys , 1990 .

[16]  S. Wasim,et al.  Electrical and Optical Properties of n- and p-Type CuInTe2 , 1988, December 16.

[17]  C. Rincón A model for the band gap shrinkage in the chalcopyrite semiconductor CuInSe2 , 1987 .

[18]  Fritz Henneberger,et al.  Optical Bistability at the Absorption Edge of Semiconductors , 1986 .

[19]  R. D. Tomlinson,et al.  Band-gap narrowing in n-type CuInSe2 single crystals , 1986 .

[20]  C. Rincón,et al.  Optical absorption study of CuInTe2 crystals grown from near-stoichiometric compositions , 1984 .

[21]  R. D. Tomlinson,et al.  Thermal expansion of CuInTe2 from 30 to 300 K , 1984 .

[22]  J. Woolley,et al.  Temperature dependence of the energy gap in semiconductors , 1984 .

[23]  S. Wasim On the Electron Effective Mass in n-CuInTe2 , 1983, January 16.

[24]  H. Sobotta,et al.  Infrared study of lattice and free carrier effects in p-type CuInTe2 single crystals , 1980 .

[25]  T. S. Moss,et al.  Handbook on semiconductors , 1980 .

[26]  L. Haworth,et al.  Growth and Characterization of CuInTe2 Single Crystals , 1980 .

[27]  S. Wasim,et al.  Transport Properties of Ternary Compounds , 1980 .

[28]  P. W. Li,et al.  Dielectric constant of CuInSe2 by capacitance measurements , 1979 .

[29]  G. Kühn,et al.  Temperature dependence of the fundamental absorption edge in CuGaSe2 , 1978 .

[30]  K. Bachmann,et al.  Debye temperature and standard entropies and enthalpies of compound semiconductors of the type I-III-VI2 , 1977 .

[31]  R. J. Elliott,et al.  Intensity of Optical Absorption by Excitons , 1957 .