论文信息 - Compensation and deep levels in II–VI compounds - 字舞流文

Compensation and deep levels in II–VI compounds

B. Fraboni | A. Cavallini | A. Castaldini | P. Fernández | J. Piqueras | L. Polenta

[1] U. Pal,et al. Cathodoluminescence characterization of Ge‐doped CdTe crystals , 1995 .

[2] J. Allen. Spectroscopy of lattice defects in tetrahedral II-VI compounds , 1995 .

[3] U. Pal,et al. Study of defects in CdTe: Cl by cathodoluminescence microscopy , 1995 .

[4] Meyer,et al. Optical investigations of defects in Cd1-xZnxTe. , 1995, Physical review. B, Condensed matter.

[5] Klaus-Werner Benz,et al. Comparison of CdTe, Cd0.9Zn0.1Te and CdTe0.9Se0.1 crystals: application for γ- and X-ray detectors , 1994 .

[6] González,et al. Photoluminescence and absorption studies of defects in CdTe and ZnxCd1-xTe crystals. , 1993, Physical review. B, Condensed matter.

[7] Peter Blood,et al. The Electrical Characterization of Semiconductors: Majority Carriers and Electron States , 1992 .

[8] Meyer,et al. Identification of the chlorine A center in CdTe. , 1992, Physical review. B, Condensed matter.

[9] P. Siffert,et al. About the origin of the 0.15 to 0.20 eV defect level in cadmium telluride , 1987 .

[10] Patricia M. Mooney,et al. Photo‐deep level transient spectroscopy: A technique to study deep levels in heavily compensated semiconductors , 1983 .