A non-iterative physical procedure for RF CMOS compact model extraction using BSIM6

We present a non-iterative and physical five-step RF SPICE model extraction procedure. This procedure is applicable to any MOSFET compact model with all necessary RF-related components in it. This methodology has been validated on silicon data from multiple technology nodes for a wide range of bias and frequency.

[1]  M. Bucher,et al.  EKV3 Parameter Extraction and Characterization of 90nm RF-CMOS Technology , 2007, 2007 14th International Conference on Mixed Design of Integrated Circuits and Systems.

[2]  C.C. McAndrew,et al.  Validation of MOSFET model Source–Drain Symmetry , 2006, IEEE Transactions on Electron Devices.

[3]  M.J. Deen,et al.  An effective gate resistance model for CMOS RF and noise modeling , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[4]  M.J. Deen,et al.  MOSFET modeling for RF IC design , 2005, IEEE Transactions on Electron Devices.

[5]  Antonios Bazigos,et al.  An efficient channel segmentation approach for a large-signal NQS MOSFET model , 2008 .

[6]  S. H. Jen,et al.  Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz , 1999 .