Switching characteristics of NPT- and PT-IGBTs under zero-voltage switching conditions

In this paper, switching characteristics of nonpunch through (NPT) and punch through (PT) insulated gate bipolar transistors (IGBTs) are evaluated under zero-voltage switching (ZVS) conditions. Through the physics-based modeling and experiments, the interaction between the external circuit and the physical IGBT internal model under ZVS operation is evaluated. The effects of the external snubber capacitor on the turn-off tail current are modeled and analyzed with the Saber circuit simulator. The turn-on switching characteristics are evaluated for the study of switching losses. This study provides guidelines for designing IGBTs that are suitable for soft switching and for selection of appropriate snubbing capacitors in soft-switching inverter and converter applications.

[1]  D. Divan,et al.  Switching dynamics of IGBTs in soft-switching converters , 1995 .

[2]  Jean-Michel Vinassa,et al.  Switching performances comparison of 1200 V punch-through and nonpunch-through IGBTs under hard-switching at high temperature , 1998, PESC 98 Record. 29th Annual IEEE Power Electronics Specialists Conference (Cat. No.98CH36196).

[3]  Jih-Sheng Lai,et al.  A novel two-quadrant soft-switching converter with one auxiliary switch for high power applications , 1999, Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370).

[4]  Frede Blaabjerg,et al.  A Critical Evaluation of Modern IGBT-Modules , 1995 .

[5]  Sameer Pendharkar,et al.  Zero voltage switching behavior of punchthrough and nonpunchthrough insulated gate bipolar transistors (IGBT's) , 1998 .

[6]  David A. Torrey,et al.  A study of the internal device dynamics of punch-through and nonpunch-through IGBTs under zero-current switching , 1996, Proceedings of Applied Power Electronics Conference. APEC '96.

[7]  D. M. Diebolt,et al.  An experimentally verified IGBT model implemented in the Saber circuit simulator , 1991, PESC '91 Record 22nd Annual IEEE Power Electronics Specialists Conference.

[8]  R. Herzer,et al.  COMPARISON OF PT AND NPT CELL CONCEPT FOR 600 V IGBTs , 1999 .

[9]  Jih-Sheng Lai.  Fundamentals of a new family of auxiliary resonant snubber inverters , 1997, Proceedings of the IECON'97 23rd International Conference on Industrial Electronics, Control, and Instrumentation (Cat. No.97CH36066).

[10]  Allen R. Hefner,et al.  Modeling Buffer Layer IGBT's for Circuit Simulation | NIST , 1993 .

[11]  V. Parthasarathy,et al.  A study of the internal device dynamics of punch-through and nonpunch-through IGBTs under zero-current switching , 1997 .