All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor With Amorphous Indium–Gallium–Zinc Oxide Channel
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Sangwoo Kim | Rino Choi | Jiyong Yim | Dae-Hun Kwon | Soi Jeong | Jeonghan Kim | Ji-Won You | Changhyeon Han | K. Kwon | Eun Chan Park
[1] A. Chernikova,et al. On the Reliability of HZO-Based Ferroelectric Capacitors: The Cases of Ru and TiN Electrodes , 2022, Nanomaterials.
[2] Sang Yeol Lee,et al. Effects of change of oxygen vacancy on hysteresis voltage and stability under time-temperature dependence positive bias stress in amorphous SZTO transistors , 2021, Microelectronic Engineering.
[3] S. Slesazeck,et al. Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read. , 2021, Nanoscale.
[4] A. Chernikova,et al. Dynamic imprint recovery as an origin of the pulse width dependence of retention in Hf0.5Zr0.5O2-based capacitors , 2021, Applied Physics Letters.
[5] K. Han,et al. Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/HfxZr1-xO2/Interlayer/Si (MFIS) Gate Structure , 2021, IEEE Transactions on Electron Devices.
[6] L. Larcher,et al. Mechanism of Retention Degradation after Endurance Cycling of HfO2-based Ferroelectric Transistors , 2021, 2021 Symposium on VLSI Technology.
[7] C. Hu,et al. Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles , 2021, IEEE Electron Device Letters.
[8] Shawn Sanctis,et al. A Fully Integrated Ferroelectric Thin‐Film‐Transistor – Influence of Device Scaling on Threshold Voltage Compensation in Displays , 2021, Advanced Electronic Materials.
[9] Jang‐Sik Lee,et al. CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory , 2021, Science Advances.
[10] S. Slesazeck,et al. Impact of Read Operation on the Performance of HfO2-Based Ferroelectric FETs , 2020, IEEE Electron Device Letters.
[11] Y. Hao,et al. Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory , 2020, Nanoscale Research Letters.
[12] G. Gelinck,et al. Depolarization of multidomain ferroelectric materials , 2019, Nature Communications.
[13] Shuaizhi Zheng,et al. Program/Erase Cycling Degradation Mechanism of HfO2-Based FeFET Memory Devices , 2019, IEEE Electron Device Letters.
[14] Jiyoung Kim,et al. Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances , 2018, JOM.
[15] K. V. Van Vliet,et al. Polarizing Oxygen Vacancies in Insulating Metal Oxides under a High Electric Field. , 2017, Physical review letters.
[16] David-Wei Zhang,et al. Ferroelectric polarization and defect-dipole switching in an epitaxial (111) BiFeO3 thin film , 2015 .
[17] S. Slesazeck,et al. Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories , 2014, 2014 IEEE International Reliability Physics Symposium.
[18] V. Lo,et al. Investigating the effect of oxygen vacancy on the dielectric and electromechanical properties in ferroelectric ceramics , 2008 .
[19] A. Tagantsev,et al. Polarization fatigue in ferroelectric films: Basic experimental findings, phenomenological scenarios, and microscopic features , 2001 .
[20] Hyung-Kyu Lim,et al. Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's , 1983, IEEE Transactions on Electron Devices.
[21] C. Jin,et al. Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application , 2020, IEEE Journal of the Electron Devices Society.
[22] Tso-Ping Ma,et al. A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation , 2018, IEEE Electron Device Letters.
[23] T. Boscke,et al. Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors , 2011, 2011 International Electron Devices Meeting.