Modulation of optical and electrical properties of sputtering-derived amorphous InGaZnO thin films by oxygen partial pressure
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J. Zhang | G. He | J. Lv | Peihong Wang | M. Liu | X. Chen | B. Deng | M. Zhang | Z. Q. Sun | Xi-Bao Chen | Z. Sun
[1] Jia Wu,et al. Comparison of physical and electrical properties of GZO/ZnO buffer layer and GZO as source and drain electrodes of α-IGZO thin-film transistors , 2014 .
[2] Hyun-Jong Kim,et al. The influence of oxygen partial pressure on the performance and stability of Ge-doped InGaO thin film transistors , 2014 .
[3] Chun-Yen Chang,et al. Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate , 2013 .
[4] A. Gusev,et al. Structure and properties of PbS films , 2013 .
[5] H. H. Güllü,et al. Structural and optical properties of Zn–In–Te thin films deposited by thermal evaporation technique , 2013 .
[6] Yoshiyuki Abe,et al. Thin-film transistors fabricated by low-temperature process based on Ga- and Zn-free amorphous oxide semiconductor , 2013 .
[7] C. Lo,et al. Preparation of IGZO sputtering target and its applications to thin-film transistor devices , 2012 .
[8] Jaehun Park,et al. Blue shift in the optical band gap of amorphous Hf–In–Zn–O thin films deposited by RF sputtering , 2012 .
[9] Tingting Tan,et al. Influence of O2/Ar flow ratio on the structure and optical properties of sputtered hafnium dioxide thin films , 2010 .
[10] M. Kordesch,et al. Growth and optical properties of amorphous Be0.13Zn0.38O0.49 thin films prepared by radio frequency magnetron sputtering , 2008 .
[11] J. Muth,et al. Transparent, high mobility InGaZnO thin films deposited by PLD , 2008 .
[12] Seong Jun Kang,et al. Influence of substrate temperature on the optical and piezoelectric properties of ZnO thin films deposited by rf magnetron sputtering , 2007 .
[13] Lide Zhang,et al. Optical and electrical properties of plasma-oxidation derived HfO2 gate dielectric films , 2007 .
[14] M. Kordesch,et al. Optical properties of a-HfO2 thin films , 2006 .
[15] Mircea Modreanu,et al. Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films , 2006 .
[16] T. Kamiya,et al. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering , 2006 .
[17] E. Fortunato,et al. Recent advances in ZnO transparent thin film transistors , 2005 .
[18] E. Fortunato,et al. Influence of the oxygen/argon ratio on the properties of sputtered hafnium oxide , 2005 .
[19] T. Minami. Transparent conducting oxide semiconductors for transparent electrodes , 2005 .
[20] R. McLean,et al. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering , 2003 .
[21] V. Cimalla,et al. Dependence of the photoreduction and oxidation behavior of indium oxide films on substrate temperature and film thickness , 2001 .
[22] S. Chu,et al. X-ray reflectivity and surface energy analyses of the physical and electrical properties of α-IGZO/GZO double active layer thin film transistors , 2014 .
[23] Horng-Chih Lin,et al. Relationships between the crystalline phase of an IGZO target and electrical properties of a-IGZO channel film , 2012 .
[24] Claus Klingshirn,et al. Semiconductor Optics , 1995 .
[25] Jacques I. Pankove,et al. Optical Processes in Semiconductors , 1971 .