论文信息 - Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation

Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation

We report low microwave noise performance of discrete AlGaN-GaN HEMTs at DC power dissipation comparable to that of GaAs-based low-noise FETs. At 1-V source-drain (SD) bias and DC power dissipation of 97 mW/mm, minimum noise figures (NF/sub min/) of 0.75 dB at 10 GHz and 1.5 dB at 20 GHz were achieved, respectively. A device breakdown voltage of 40 V was observed. Both the low microwave noise performance at small DC power level and high breakdown voltage was obtained with a shorter SD spacing of 1.5 /spl mu/m in 0.15-/spl mu/m gate length GaN HEMTs. By comparison, NF/sub min/ with 2 /spl mu/m SD spacing was 0.2 dB greater at 10 GHz.

[1] Y. Yamane,et al. Extremely low-noise performance of GaAs MESFETs with wide-head T-shaped gate , 1999 .

[2] P. Janke,et al. Robust low microwave noise GaN MODFETs with 0.60 dB noise figure at 10 GHz , 2000 .

[3] Y.-F. Wu,et al. High Al-content AlGaN/GaN MODFETs for ultrahigh performance , 1998, IEEE Electron Device Letters.

[4] P. Janke,et al. GaN/AlGaN HEMTs operating at 20 GHz with continuous-wave power density >6 W/mm , 2001 .

[5] Umesh K. Mishra,et al. High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts , 1998 .

[6] Ilesanmi Adesida,et al. AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise , 2001 .

[7] C. Park,et al. Ultra low noise characteristics of AlGaAs/InGaAs/GaAs pseudomorphic HEMT's with wide head T-shaped gate , 1995 .

[8] K. Doverspike,et al. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates , 1999, IEEE Electron Device Letters.

[9] Lester F. Eastman,et al. Undoped AlGaN/GaN HEMTs for microwave power amplification , 2001 .

[10] M. W. Pierce,et al. Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length , 1988, IEEE Electron Device Letters.

[11] M. Khan,et al. Microwave noise performance of AlGaN/GaN HEMTs , 2000 .

[12] Ilesanmi Adesida,et al. AlGaN / GaN HEMTs on SiC with over 100 GHz fT and Low Microwave Noise , 2001 .