Pressure contact assembly technology of high power devices
暂无分享,去创建一个
[1] M. Yamamoto,et al. A new high power low loss GTO , 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.
[2] H. Schwarzbauer,et al. Novel large area joining technique for improved power device performance , 1989, Conference Record of the IEEE Industry Applications Society Annual Meeting,.
[3] E. Herr,et al. Reliable 1200 amp 2500 V IGBT modules for traction applications , 1995 .
[5] Wu-chen Wu,et al. Thermal stress related packaging failure in power IGBT modules , 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.
[6] Wuchen Wu,et al. Reliability testing and analysis of IGBT power semiconductor modules , 1995 .
[7] T. Fujiwara,et al. Design optimization for improving high power GTO switching characteristics with 'alloy free technology' , 1990, Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90..
[8] J. Onuki,et al. Reliability of thick Al wire bonds in IGBT modules for traction motor drives , 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.
[9] T. Ni. A 8kV 3500A light Triggered Thyristor , 1995 .
[10] Wu-chen Wu,et al. Investigation on the long term reliability of power IGBT modules , 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.
[11] K. Satoh,et al. 8 kV/3.6 kA light triggered thyristor , 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.