Reconfigurable silicon nanowire transistors.
暂无分享,去创建一个
Stefan Slesazeck | Thomas Mikolajick | Walter M. Weber | Franz Kreupl | Andre Heinzig | S. Slesazeck | T. Mikolajick | F. Kreupl | W. Weber | A. Heinzig
[1] A. S. Grove,et al. Characteristics of the Surface‐State Charge (Qss) of Thermally Oxidized Silicon , 1967 .
[2] T. M. Klapwijk,et al. Scaling of nano-Schottky-diodes , 2002 .
[3] Stefan Heinze,et al. Electrostatic engineering of nanotube transistors for improved performance , 2003 .
[4] Paolo Lugli,et al. Silicon-nanowire transistors with intruded nickel-silicide contacts. , 2006, Nano letters.
[5] R. T. Tung. Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces , 1984 .
[6] J. Larson,et al. Overview and status of metal S/D Schottky-barrier MOSFET technology , 2006, IEEE Transactions on Electron Devices.
[7] C. Lieber,et al. Nanowire Crossbar Arrays as Address Decoders for Integrated Nanosystems , 2003, Science.
[8] K. Maex. Materials aspects of silicides for advanced technologies , 1991 .
[9] C. Lieber,et al. Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed. , 2008, Nano letters.
[10] Charles M Lieber,et al. Spin states of the first four holes in a silicon nanowire quantum dot. , 2008, Nano letters.
[11] J. Knoch,et al. Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors , 2002 .
[12] Charles M. Lieber,et al. Doping and Electrical Transport in Silicon Nanowires , 2000 .
[13] Sung-Mo Kang,et al. Fringing field effects on electrical resistivity of semiconductor nanowire-metal contacts , 2008 .
[14] H. Riel,et al. Toward Nanowire Electronics , 2008, IEEE Transactions on Electron Devices.
[15] Yu Huang,et al. Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices. , 2008, Nano letters.
[16] Wei Lu,et al. Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures , 2004 .
[17] J. Knoch,et al. High-performance carbon nanotube field-effect transistor with tunable polarities , 2005, IEEE Transactions on Nanotechnology.
[18] T. Mikolajick,et al. The effect of random dopant fluctuations on the minimum channel length of short-channel MOS transistors , 1997 .
[19] Hao Yan,et al. Programmable nanowire circuits for nanoprocessors , 2011, Nature.
[20] Jane P. Chang,et al. In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction. , 2007, Nano letters.
[21] André DeHon,et al. Nanowire-based programmable architectures , 2005, JETC.
[22] D. Stewart,et al. The missing memristor found , 2008, Nature.
[23] Thomas Mikolajick,et al. Direct probing of Schottky barriers in Si nanowire Schottky barrier field effect transistors. , 2011, Physical review letters.
[24] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.
[25] A. Chin,et al. Germanium pMOSFETs with Schottky-barrier germanide S/D, high-/spl kappa/ gate dielectric and metal gate , 2005, IEEE Electron Device Letters.
[26] King-Ning Tu,et al. Barrier heights and silicide formation for Ni, Pd, and Pt on silicon , 1981 .