Wideband LNA for a multistandard wireless receiver in 0.18 /spl mu/m CMOS

A differential wideband LNA for a multistandard receiver has been designed and implemented in 0.18/spl mu/m CMOS. The circuit topology is a two-stage amplifier with active feedback. The input stage is a common-source stage with a common-drain stage in the feedback loop for impedance matching. Bandwidth enhancement with inductive shunt-peaking is used for maximizing the bandwidth. Measurements on the fabricated device show a power gain of 13.1 dB and a 3-dB bandwidth of nearly 7 GHz together with an IIP3 and a 1-dB compression point of -4.7 dBm and -15.2 dBm respectively. The measured noise figures are 3.3 dB at 1 GHz and 5.5 dB at 6 GHz. Reported LNAs with similar performance are usually implemented with bipolar transistors or MESFETs.

[1]  Hossein Hashemi,et al.  Concurrent multiband low-noise amplifiers-theory, design, and applications , 2002 .

[2]  K. O.,et al.  The effects of a ground shield on spiral inductors fabricated in a silicon bipolar technology , 2000, Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124).

[3]  K. O. Kenneth,et al.  The effects of a ground shield on the characteristics and performance of spiral inductors , 2002, IEEE J. Solid State Circuits.

[4]  Stephen P. Boyd,et al.  Bandwidth extension in CMOS with optimized on-chip inductors , 2000, IEEE Journal of Solid-State Circuits.