MBE growth of multiple quantum wells with room-temperature exciton peaks at 1.3 μm

GaAlInAsAlInAs multiple quantum wells have been grown lattice matched on InP substrates by taking into account the time dependence of the fluxes as the shutters open and close. RHEED oscillations are observed and used to calibrate layer thicknesses and growth quality. The half width of the lowest exciton peak is 12 meV.