Single-electron charging effect in individual Si nanocrystals
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Thierry Baron | Noël Magnea | P. Mur | Pascal Gentile | T. Baron | P. Gentile | N. Magnea | P. Mur
[1] U. Banin,et al. Scanning tunneling spectroscopy of InAs nanocrystal quantum dots , 2000 .
[2] F. Stern,et al. Electronic properties of two-dimensional systems , 1982 .
[3] Thierry Baron,et al. Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices , 2000 .
[4] Averin,et al. Theory of single-electron charging of quantum wells and dots. , 1991, Physical review. B, Condensed matter.
[5] van Kempen H,et al. Single-electron tunneling observed with point-contact tunnel junctions. , 1988, Physical review letters.
[6] G. Ghibaudo,et al. Ultra-thin oxides grown on silicon (1 0 0) by rapid thermal oxidation for CMOS and advanced devices , 2001 .
[7] Eun Kyu Kim,et al. Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor , 1998 .
[8] Coulomb blockade: Poisson versus Pauli in a silicon quantum box , 1999 .
[9] R. Feenstra,et al. Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors. , 1994, Physical review. B, Condensed matter.
[10] Law,et al. Single-electron tunneling and Coulomb charging effects in aysmmetric double-barrier resonant-tunneling diodes. , 1992, Physical review. B, Condensed matter.
[11] Michel Devoret,et al. Single Charge Tunneling , 1992 .
[12] Sandip Tiwari,et al. Single charge and confinement effects in nano-crystal memories , 1996 .
[13] Y. Niquet,et al. Method for tight-binding parametrization: Application to silicon nanostructures , 2000 .
[14] Thierry Baron,et al. Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices , 2000 .