Local Polarization Effects in Nitride Heterostructures and Devices

[1]  E. Yu,et al.  Observation of In concentration variations in InGaN/GaN quantum-well heterostructures by scanning capacitance microscopy , 2005 .

[2]  E. Yu,et al.  Observation of subsurface monolayer thickness fluctuations in InGaN∕GaN quantum wells by scanning capacitance microscopy and spectroscopy , 2004 .

[3]  Christiane Poblenz,et al.  Measurement of polarization charge and conduction-band offset at InxGa1−xN/GaN heterojunction interfaces , 2004 .

[4]  R. Davis,et al.  STRAIN OF GaN LAYERS GROWN USING 6H-SiC(0001) SUBSTRATES WITH DIFFERENT BUFFER LAYERS , 2004 .

[5]  Daniel M. Schaadt,et al.  Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy , 2003 .

[6]  Fernando Ponce,et al.  Microstructure and electronic properties of InGaN alloys , 2003 .

[7]  E. Kohn,et al.  Transient characteristics of GaN-based heterostructure field-effect transistors , 2003 .

[8]  Y. Li,et al.  Ohmic contact technology in III nitrides using polarization effects of cap layers , 2002 .

[9]  E. Yu,et al.  Scanning capacitance spectroscopy of an AlxGa1−xN/GaN heterostructure field-effect transistor structure: Analysis of probe tip effects , 2002 .

[10]  Michael Kneissl,et al.  Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy , 2002 .

[11]  Christiane Poblenz,et al.  Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope , 2002 .

[12]  Richard J. Molnar,et al.  Scanning Kelvin probe microscopy of surface electronic structure in GaN grown by hydride vapor phase epitaxy , 2002 .

[13]  Christiane Poblenz,et al.  Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling , 2002 .

[14]  Jacek A. Majewski,et al.  Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures , 2002 .

[15]  E. Yu,et al.  Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy , 2001 .

[16]  J. S. Yahng,et al.  Measurement of piezoelectric field and tunneling times in strongly biased InGaN/GaN quantum wells , 2001 .

[17]  E. Yu,et al.  Quantitative analysis of nanoscale electronic properties in an AlxGa1−xN/GaN heterostructure field-effect transistor structure , 2001 .

[18]  Michael G. Spencer,et al.  Scanning Kelvin probe microscopy characterization of dislocations in III-nitrides grown by metalorganic chemical vapor deposition , 2001 .

[19]  Richard J. Molnar,et al.  Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes , 2001 .

[20]  D. Lang,et al.  Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures , 2001 .

[21]  Pierre Lefebvre,et al.  High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy , 2001 .

[22]  E. Yu,et al.  Charging effects in AlGaN/GaN heterostructures probed using scanning capacitance microscopy , 2000 .

[23]  K. Rim,et al.  Fabrication and analysis of deep submicron strained-Si n-MOSFET's , 2000 .

[24]  E. Yu,et al.  Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaN HBTs , 2000 .

[25]  José Luis Sánchez-Rojas,et al.  Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis , 1999 .

[26]  E. Yu,et al.  Scanning capacitance microscopy of AlGaN/GaN heterostructure field-effect transistor epitaxial layer structures , 1999 .

[27]  S. Denbaars,et al.  AlGaN/GaN heterojunction bipolar transistor , 1999, IEEE Electron Device Letters.

[28]  James S. Speck,et al.  Dislocation mediated surface morphology of GaN , 1999 .

[29]  E. Yu,et al.  Piezoelectric polarization associated with dislocations in wurtzite GaN , 1999 .

[30]  Ellen B. Stechel,et al.  Charge accumulation at a threading edge dislocation in gallium nitride , 1999 .

[31]  M. Shur,et al.  Piezoelectric doping and elastic strain relaxation in AlGaN–GaN heterostructure field effect transistors , 1998 .

[32]  T. C. McGill,et al.  Correlation between the surface defect distribution and minority carrier transport properties in GaN , 1998 .

[33]  Sven Öberg,et al.  DEEP ACCEPTORS TRAPPED AT THREADING-EDGE DISLOCATIONS IN GAN , 1998 .

[34]  Ulrike Grossner,et al.  The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN , 1998 .

[35]  Larry A. Coldren,et al.  Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures , 1998 .

[36]  Joan M. Redwing,et al.  Schottky barrier engineering in III-V nitrides via the piezoelectric effect , 1998 .

[37]  Shigeru Nakagawa,et al.  Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect , 1998 .

[38]  Lester F. Eastman,et al.  The role of dislocation scattering in n-type GaN films , 1998 .

[39]  I. Adesida,et al.  Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations , 1998 .

[40]  W. Walukiewicz,et al.  Effects of piezoelectric field on defect formation, charge transfer, and electron transport at GaN/AlxGa1−xN interfaces , 1998 .

[41]  Lester F. Eastman,et al.  Scattering of electrons at threading dislocations in GaN , 1998 .

[42]  Oliver Ambacher,et al.  Sound velocity of AlxGa1−xN thin films obtained by surface acoustic-wave measurements , 1998 .

[43]  D. Mensa,et al.  A>400 GHz f/sub max/ transferred-substrate heterojunction bipolar transistor IC technology , 1998, IEEE Electron Device Letters.

[44]  S. Denbaars,et al.  Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy , 1997 .

[45]  Peter M. Asbeck,et al.  Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors , 1997 .

[46]  Alan Francis Wright,et al.  Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN , 1997 .

[47]  D. Vanderbilt,et al.  Spontaneous polarization and piezoelectric constants of III-V nitrides , 1997, cond-mat/9705105.

[48]  Michael S. Shur,et al.  Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices , 1997 .

[49]  E. Weber,et al.  Elastic moduli of gallium nitride , 1997 .

[50]  E. C. Carr,et al.  CORRELATION OF CATHODOLUMINESCENCE INHOMOGENEITY WITH MICROSTRUCTURAL DEFECTS IN EPITAXIAL GAN GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION , 1997 .

[51]  S. Nakamura,et al.  Spontaneous emission of localized excitons in InGaN single and multiquantum well structures , 1996 .

[52]  Kim,et al.  Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN. , 1996, Physical review. B, Condensed matter.

[53]  S. Nakamura,et al.  Brillouin scattering study in the GaN epitaxial layer , 1996 .

[54]  Izabella Grzegory,et al.  Elastic constants of gallium nitride , 1996 .

[55]  Michael S. Shur,et al.  Piezoresistive effect in wurtzite n‐type GaN , 1996 .

[56]  H. Morkoç,et al.  Progress and prospects for GaN and the III–V nitride semiconductors , 1993 .

[57]  R. French,et al.  Vibrational Spectroscopy of Aluminum Nitride , 1993 .

[58]  J. David Zook,et al.  Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation , 1992 .

[59]  Reuben T. Collins,et al.  Field‐effect transistor structure based on strain‐induced polarization charges , 1990 .

[60]  B. V. Shanabrook,et al.  Strain‐induced two‐dimensional electron gas in [111] growth‐axis strained‐layer structures , 1990 .

[61]  Darryl L. Smith,et al.  Piezoelectric effects in strained-layer superlattices , 1988 .

[62]  D. L. Smith,et al.  Strain-generated electric fields in [111] growth axis strained-layer superlattices , 1986 .

[63]  K. Tsubouchi,et al.  Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial Films , 1985, IEEE Transactions on Sonics and Ultrasonics.

[64]  K. W. Wecht,et al.  Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, N‐n heterojunction by C‐V profiling , 1983 .

[65]  James S. Harris,et al.  Measurement of isotype heterojunction barriers by C‐V profiling , 1980 .

[66]  Paul Anthony Kirkby,et al.  Photoelastic waveguides and their effect on stripe‐geometry GaAs/Ga1−xAlxAs lasers , 1979 .

[67]  A. Sheleg,et al.  Study of the elastic properties of gallium nitride , 1978 .

[68]  Michael A. Littlejohn,et al.  Monte Carlo calculation of the velocity‐field relationship for gallium nitride , 1975 .

[69]  M. T. Duffy,et al.  Acoustic surface wave properties of epitaxially grown aluminum nitride and gallium nitride on sapphire , 1973 .

[70]  John F Nye Physical Properties of Crystals: Their Representation by Tensors and Matrices , 1957 .

[71]  Yugang Zhou,et al.  AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement , 2006, IEEE Electron Device Letters.

[72]  S. Keller,et al.  AlGaN/GaN high electron mobility transistors with InGaN back-barriers , 2006, IEEE Electron Device Letters.

[73]  J. Chyi,et al.  Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy , 2002 .

[74]  E. Yu,et al.  Lateral variations in threshold voltage of an AlxGa1−xN/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy , 2001 .

[75]  P. Asbeck,et al.  Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures , 1999 .

[76]  F. Ren,et al.  300°C GaN/AlGaN Heterojunction Bipolar Transistor , 1998 .

[77]  David P. Bour,et al.  Spatial distribution of the luminescence in GaN thin films , 1996 .

[78]  A. Ballato,et al.  Piezoelectric materials for acoustic wave applications , 1994, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.

[79]  P. Asbeck,et al.  Piezoelectric effects in GaAs FET's and their role in orientation-dependent device characteristics , 1984, IEEE Transactions on Electron Devices.

[80]  H. Kroemer,et al.  Heterostructure bipolar transistors and integrated circuits , 1982, Proceedings of the IEEE.

[81]  J. Hirth Theory of Dislocations , 1968 .