Growth of Nb-catalysed GaN nanowires

GaN nanowires have been successfully synthesized on Si(111) substrate by ammoniating Ga"2O"3 films at 950^oC. The structure and morphology of GaN nanowires are characterized by X-ray diffraction, scanning electron microscopy, field-emission transmission electron microscope and X-ray photoelectron spectroscopy. The results show that the synthesized nanowires are single-crystal hexagonal wurtzite GaN with diameters ranging from 50 to 100nm and lengths up to several microns. Finally, the growth mechanism of GaN nanowires is explored.

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