论文信息 - E-mode planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT = 0.8 nm) composite insulator - 字舞流文

E-mode planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT = 0.8 nm) composite insulator

M. Urteaga | D. Kim | B. Brar | J. Kuo | Y. Kao | J. Li | P. Chen | P. Hundal | P. Pinsukanjana | C. King | A. Papavasiliou | J. Paniagua | Y. G. Kim