A monolithic thermopile detector fabricated using integrated-circuit technology
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A thermopile infrared detector fabricated using silicon integrated-circuit technology is described. The device uses a series-connected array of thermocouples whose hot junctions are supported on a thin silicon membrane formed using anisotropic etching and a diffused boron etch-stop. The membrane size and thickness control the speed and responsivity of the structure, which can be designed for a given application. For a membrane measuring 2mm × 2mm × 1µm and containing sixty bismuth-antimony couples, the structure produces a responsivity of 7 volts/watt and a time constant of about 15 msec. Polysilicon couples and the use of slotted membranes can provide further performance improvements while retaining compatibility with on-chip signal processing circuitry.
[1] R. A. Smith,et al. The Detection and Measurement of Infrared Radiation , 1958 .
[2] W. R. Runyan. Silicon Semiconductor Technology , 1965 .
[3] A. Bohg. Ethylene Diamine‐Pyrocatechol‐Water Mixture Shows Etching Anomaly in Boron‐Doped Silicon , 1971 .
[4] H. Levinstein,et al. Infrared detectors in remote sensing , 1975, Proceedings of the IEEE.
[5] S. W. Angrist. Direct energy conversion , 1976 .