Development research of thermocouple-based microwave power sensors using AC/DC substitution method

Abstract In this work, a thermocouple-based microwave power sensor using AC/DC substitution method is developed. The reason that the output voltage is different under different microwave frequency is explained. An improved package solution of the thermocouple-based microwave power sensor is designed at X-band (8–12 GHz). The fabrication of this thermocouple-based microwave power sensor is divided into a front side and a back side processing using GaAs MMIC process and MEMS technology. The measurement results show that the output voltage of the microwave power sensor decreases with increasing microwave frequency, and the COB (Chip on Board) technology brings an economic package solution for the thermocouple-based microwave power sensor. The microwave power sensor after package can be applied into the radar system and other microwave system.

[1]  High-frequency current distribution in thin-film comb thermal converter , 2005 .

[2]  De-bo Wang,et al.  A terminating-type MEMS microwave power sensor and its amplification system , 2010 .

[3]  H. Nilsson,et al.  Design of a Micromachined Thermopile Infrared Sensor With a Self-Supported ${\rm SiO}_{2}/{\rm SU}{-}8$ Membrane , 2008, IEEE Sensors Journal.

[4]  X. Liao,et al.  Optimization of Indirectly-Heated Type Microwave Power Sensors Based on GaAs Micromachining , 2012, IEEE Sensors Journal.

[5]  Pascal Xavier,et al.  A power sensor for fast measurement of telecommunications signals using substitution method , 2001, IEEE Trans. Instrum. Meas..

[7]  X.-P. Liao,et al.  Research on sensitivity characteristic of indirectly-heated type thermopile power sensor , 2011 .

[8]  Mircea Dragoman,et al.  Millimeter-wave passive circuit elements based on GaAs micromachining , 2005 .

[9]  D. Pozar Microwave Engineering , 1990 .

[10]  H. Tilmans Equivalent circuit representation of electromechanical transducers: I. Lumped-parameter systems , 1996 .

[11]  Jongseok Kim,et al.  RF device package method using Au to Au direct bonding technology , 2009, Microelectron. Reliab..

[12]  R. P. Ribas,et al.  An approach for microsystems codesign , 1999, Proceedings. XII Symposium on Integrated Circuits and Systems Design (Cat. No.PR00387).

[13]  K. Shih,et al.  Contact resistances of AuGeNi, AuZn and Al to III–V compounds , 1972 .

[14]  L. Grno Thermal wattmeter with direct power conversion , 1995 .

[15]  Yeun-Ho Joung,et al.  Chip-to-Board Micromachining for Interconnect Layer Passive Components , 2007, IEEE Transactions on Components and Packaging Technologies.

[16]  Jonathan B. Scott,et al.  New Thermocouple-Based Microwave/Millimeter-Wave Power Sensor MMIC Techniques in GaAs , 2011, IEEE Transactions on Microwave Theory and Techniques.

[17]  De-bo Wang,et al.  A voltage source model on thermoelectric power sensor based on MEMS technology , 2011 .

[18]  L.P.B. Katehi,et al.  Fabrication and accelerated hermeticity testing of an on-wafer package for RF MEMS , 2004, IEEE Transactions on Microwave Theory and Techniques.

[19]  De-bo Wang,et al.  A novel symmetrical microwave power sensor based on GaAs monolithic microwave integrated circuit technology , 2009 .