论文信息 - Suppression of Defects and Deep Levels Using Isoelectronic Tungsten Substitution in Monolayer MoSe2 - 字舞流文

Suppression of Defects and Deep Levels Using Isoelectronic Tungsten Substitution in Monolayer MoSe2

G. Duscher | Hui Zhao | M. Mahjouri‐Samani | D. Geohegan | C. Rouleau | R. Unocic | X. Sang | M. Tian | A. Puretzky | Xufan Li | Kai Wang | Kai Xiao | V. Cooper | S. Kc | F. Ceballos