La Jonction, du Solaire à la Microélectronique

Les application de la conversion photovoltaique ont longtemps ete limitee au domaine spatial. Le developpement des techniques et prise de conscience des problemes energetiques et d'environnement concourent a un nouvel essor de cette source d'energie. Le propos n' est pas pour de preconiser l'elimination totale de ces technique mais de montrer leurs limitation et de presenter les resultats que peut obtenir les physiciens dans l'analyse des jonction la microelectronique par l'analyse numerique . Les progres et (...)

[1]  D. W. Kammer,et al.  Laboratory Experiments with Silicon Solar Cells. , 1977 .

[2]  C. S. Fuller,et al.  A New Silicon p‐n Junction Photocell for Converting Solar Radiation into Electrical Power , 1954 .

[3]  Donard de Cogan,et al.  Electrons and Holes in Semiconductors , 2018, Statistical and Thermal Physics.

[4]  C. M. Singal.  Analytical expression for the series-resistance-dependent maximum power point and curve factor for solar cells , 1981 .

[5]  P. Mialhe,et al.  A practical method of analysis of the current-voltage characteristics of solar cells , 1981 .

[6]  J. Aranovich,et al.  Heterojunction phenomena and interfacial defects in photovoltaic converters , 1979 .

[7]  E. A. Faulkner,et al.  Modified theory of the current/voltage relation in silicon p--n junctions , 1968 .

[8]  H. Queisser,et al.  Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells , 1961 .

[9]  C. Sah,et al.  Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics , 1957, Proceedings of the IRE.

[10]  J. R. Oliver,et al.  A simplified flashlamp technique for solar cell series resistance measurements , 1981 .

[11]  Chih-Tang Sah,et al.  Effect of surface recombination and channel on P-N junction and transistor characteristics , 1962, IRE Transactions on Electron Devices.

[12]  Chih-Tang Sah,et al.  A method for determining the emitter and base lifetimes in p-n junction diodes , 1977, IEEE Transactions on Electron Devices.

[13]  Ramvir Singh,et al.  A method for the measurement of solar cell series resistance , 1983 .

[14]  J. Hauser,et al.  A two dimensional analysis of sheet resistance and contact resistance effects in solar cells , 1978 .

[15]  Sunlin Chou,et al.  An investigation of lateral transistors -d.c. characteristics , 1971 .

[16]  Experimental analysis of I–V characteristics of solar cells , 1983 .

[17]  E. Fabre.  MIS silicon solar cells , 1976 .

[18]  J. Shewchun,et al.  A better approach to the evaluation of the series resistance of solar cells , 1979 .

[19]  M. Wolf,et al.  SERIES RESISTANCE EFFECTS ON SOLAR CELL MEASUREMENTS , 1963 .

[20]  D. Redfield.  Heavy-doping effects in silicon - The role of Auger processes , 1981 .

[21]  Junction characteristics of silicon solar cells. , 1972 .

[22]  G. Araújo,et al.  Analytical expressions for the determination of the maximum power point and the fill factor of a solar cell , 1982 .

[23]  Jean-Pierre Charles,et al.  A critical study of the effectiveness of the single and double exponential models for I–V characterization of solar cells , 1985 .

[24]  William Shockley,et al.  The theory of p-n junctions in semiconductors and p-n junction transistors , 1949, Bell Syst. Tech. J..

[25]  E. L. Burgess,et al.  Application of the superposition principle to solar-cell analysis , 1979, IEEE Transactions on Electron Devices.

[26]  A. Nussbaum.  Generation-recombination characteristic behavior of silicon diodes , 1973 .