Photodetectors: UV to IR

This paper surveys recent work in several photodetector areas including high-speed, low-noise avalanche photodiodes, high-power photodiodes, solar-blind ultra-violet PIN photodiodes, and quantum dot infrared photodetectors (QDIPs).

[1]  R. Mcintyre.  Multiplication noise in uniform avalanche diodes , 1966 .

[2]  X. Li,et al.  Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region , 2001, IEEE Photonics Technology Letters.

[3]  John B. Shoven,et al.  I , Edinburgh Medical and Surgical Journal.

[4]  Yuichi Kawamura,et al.  A wide-bandwidth low-noise InGaAsP-InAlAs superlattice avalanche photodiode with a flip-chip structure for wavelengths of 1.3 and 1.55 mu m , 1993 .

[5]  Joe C. Campbell,et al.  Improved solar-blind external quantum efficiency of back-illuminated AlxGa1−xN heterojunction pin photodiodes , 2002 .

[6]  T. Ishibashi,et al.  InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz , 1998, IEEE Photonics Technology Letters.

[7]  Ping Yuan,et al.  Ultralow-noise avalanche photodiodes , 2001, SPIE OPTO.

[8]  Ping Yuan,et al.  Avalanche photodiodes with an impact-ionization-engineered multiplication region , 2000, LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080).

[9]  Kikuo Makita,et al.  Dark Current and Breakdown Analysis in In(Al)GaAs/InAlAs Superlattice Avalanche Photodiodes , 1996 .

[10]  P. Pagnod-Rossiaux,et al.  Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes , 2002 .

[11]  G. G. Stokes.  "J." , 1890, The New Yale Book of Quotations.

[12]  D. Trommer,et al.  Conservation of low dark current of InGaAs photodiodes after NH/sub 3//HF etch with a BCB passivation layer , 2000, Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).

[13]  Aaas News,et al.  Book Reviews , 1893, Buffalo Medical and Surgical Journal.

[14]  K. Kato.  Ultrawide-band/high-frequency photodetectors , 1999 .

[15]  Chee Hing Tan,et al.  Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes , 2001 .

[16]  C. R. Crowell,et al.  Ionization coefficients in semiconductors: A nonlocalized property , 1974 .

[17]  Joe C. Campbell,et al.  ULTRAVIOLET PHOTODETECTORS BASED UPON III-N MATERIALS , 2003 .

[18]  J. P. Praseuth,et al.  Waveguide AlInAs/GaAlInAs avalanche photodiode with a gain-bandwidth product over 160 GHz , 1997 .

[19]  R. C. Tozer,et al.  Low avalanche noise characteristics in thin InP p/sup +/-i-n/sup +/ diodes with electron initiated multiplication , 1999, IEEE Photonics Technology Letters.

[20]  Kenji Kawano,et al.  A high-efficiency 50 GHz InGaAs multimode waveguide photodetector , 1992 .

[21]  John P. R. David,et al.  Avalanche multiplication noise characteristics in thin GaAs p/sup +/-i-n/sup +/ diodes , 1998 .

[22]  R. Ludwig,et al.  High-power performance of a high-speed photodetector , 1998, 24th European Conference on Optical Communication. ECOC '98 (IEEE Cat. No.98TH8398).

[23]  Sethumadhavan Chandrasekhar,et al.  Multiplication noise of wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodes , 1989 .

[24]  John P. R. David,et al.  Investigation of impact ionization in thin GaAs diodes , 1996 .

[25]  J.C. Campbell,et al.  Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz , 1999, IEEE Photonics Technology Letters.

[26]  A. G. Choo,et al.  Dark current reduction in APD with BCB passivation , 2001 .

[27]  J.C. Campbell,et al.  Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product , 1998, IEEE Photonics Technology Letters.

[28]  Joe C. Campbell,et al.  Thin multiplication region InAlAs homojunction avalanche photodiodes , 1998 .

[29]  J.C. Campbell,et al.  Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thicknesses , 2000, IEEE Journal of Quantum Electronics.

[30]  Zhengmao Ye,et al.  Quantum-Dot Infrared Photodetectors , 2007, Proceedings of the IEEE.

[31]  Andrew G. Glen,et al.  APPL , 2001 .

[32]  R. D. Esman,et al.  Large-signal compression-current measurements in high-power microwave pin photodiodes , 1999 .

[33]  Joe C. Campbell,et al.  Noise characteristics of thin multiplication region GaAs avalanche photodiodes , 1996 .

[34]  P. Studenkov,et al.  An asymmetric twin-waveguide high-bandwidth photodiode using a lateral taper coupler , 2001, IEEE Photonics Technology Letters.

[35]  J.C. Campbell,et al.  Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz , 2001, IEEE Photonics Technology Letters.

[36]  Joe C. Campbell,et al.  Multiplication noise of AlxGa1−xAs avalanche photodiodes with high Al concentration and thin multiplication region , 2001 .