Catastrophic-Optical-Damage-Free InGaN Laser Diodes With Epitaxially Formed Window Structure

High-power InGaN-based laser diodes (LDs) are expected as light-sources of various high-power applications. The catastrophic-optical-damage (COD) is a major failure mechanism to limit the output power, where optical absorption at a light-emitting facet causes an irreversible damage to the LDs. In this paper, a window structure in InGaN-based LDs to suppress the COD is demonstrated for the first time. The structure is formed by the metal organic chemical vapor deposition growth over a recess placed besides of the ridge-waveguide. The In composition in the quantum well which is corresponding to the bandgap energy is reduced by controlling the local tilt angle at the sidewall of the recess. Thus, the formed window structure eliminates undesired optical absorption at the cleaved facet so that extremely high light output power over 2 W in narrow-stripe ridge-waveguide InGaN-based blue-violet LDs is achieved without any CODs.

[1]  Hidenori Kawanishi,et al.  Highly reliable 500 mW laser diodes with epitaxially grown AlON coating for high-density optical storage , 2009 .

[2]  InGaN Laser Diodes Grown on SiC Substrate Using Low-Pressure Metal-Organic Vapor Phase Epitaxy , 1997 .

[3]  Koichi Tachibana,et al.  Direct observation of uniform optical properties from microphotoluminescence mapping of InGaN quantum wells grown on slightly misoriented GaN substrates , 2008 .

[4]  Hideki Hirayama,et al.  Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes , 2005 .

[5]  Takashi Mukai,et al.  High-power and wide wavelength range GaN-based laser diodes , 2006, SPIE OPTO.

[6]  Over 1000 mW single mode operation of planar inner stripe blue‐violet laser diodes , 2006 .

[7]  小出 康夫,et al.  The Blue Laser Diode , 1998 .

[8]  I. Hayashi,et al.  An AlGaAs window structure laser , 1979, IEEE Journal of Quantum Electronics.

[9]  Takashi Mukai,et al.  365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy , 2003 .

[10]  Piotr Perlin,et al.  High-power laser structures grown on bulk GaN crystals , 2004 .

[11]  Shuji Nakamura,et al.  InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN , 1999 .

[12]  Shuji Nakamura,et al.  The Blue Laser Diode: GaN based Light Emitters and Lasers , 1997 .

[13]  K. Onozawa,et al.  High-power and high-temperature operation of Mg-doped AlGaInP-based red laser diodes , 2004, IEEE Journal of Quantum Electronics.

[14]  S. Nakamura,et al.  InGaN-Based Multi-Quantum-Well-Structure Laser Diodes , 1996 .

[15]  Jerry R. Meyer,et al.  Band parameters for nitrogen-containing semiconductors , 2003 .

[16]  J. Northrup.  Impact of hydrogen on indium incorporation atm-plane andc-planeIn0.25Ga0.75Nsurfaces: First-principles calculations , 2009 .