Energy Band Diagram near the Interface of Aluminum Oxide on p-Si Fabricated by Atomic Layer Deposition without/with Rapid Thermal Cycle Annealing Determined by Capacitance—Voltage Measurements
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N. Satoh | C. Olson | M. Lamers | I. Romijn | A. Weeber | F. Verbakel | I. Cesar | K. Bakker | Y. Komatsu | D. O. Saynova | Michiel Wiggers