Approximate process-parameter-dependent study of the logarithmic domain lossy integrator harmonic distortion levels

This paper estimates approximately and sheds light in an insightful way upon the impact of the basic bipolar process parameters upon harmonic distortion for the log-domain lossy integrator case. A step-by-step, symbolic, transistor-level distortion calculation is elaborated. The determination of the harmonic distortion levels present at the integrator's output is based upon the exploitation on the medium complexity Charge-Control-Model (CCM) for the Bipolar Junction Transistor (BJT). Results correlating the input signal strength with the impact of basic BJT non-idealities (e.g. finite beta values, parasitic base and emitter resistances) upon the output linearity levels are provided.

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