Coexistence of bipolar and unipolar resistive switching in Al-doped ceria thin films for non-volatile memory applications
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Muhammad Ismail | E. Ahmed | M. Ismail | A. M. Rana | Ejaz Ahmed | Anwar Manzoor Rana | Ijaz Talib | Muhammad Nadeem | M. Nadeem | I. Talib
[1] Bipolar tri-state resistive switching characteristics in Ti/CeO x /Pt memory device , 2014 .
[2] Ning Deng,et al. Effects of different dopants on switching behavior of HfO 2 -based resistive random access memory , 2014 .
[3] Chang-soo Kim,et al. Coexistence of unipolar and bipolar resistive switching in Pt/NiO/Pt , 2014 .
[4] Yichun Zhou,et al. Improvement of Resistive Switching Characteristics in Solution- Synthesized Al, Cr, and Cu-Doped TiO2 Films , 2014 .
[5] Yue Bai,et al. Study of conduction and switching mechanisms in Al/AlOx/WOx/W resistive switching memory for multilevel applications , 2013 .
[6] B. Gao,et al. Well controlled multiple resistive switching states in the Al local doped HfO2 resistive random access memory device , 2013 .
[7] C. Lai,et al. Influence of embedding Cu nano-particles into a Cu/SiO2/Pt structure on its resistive switching , 2013, Nanoscale Research Letters.
[8] H. Hwang,et al. Resistive switching characteristics and mechanism of thermally grown WOx thin films , 2011 .
[9] Lei Shi,et al. Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films , 2011, Nanotechnology.
[10] Yan Wang,et al. Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer. , 2011, Nanotechnology.
[11] Guoqiang Li,et al. Coexistence of the bipolar and unipolar resistive switching behaviours in Au/SrTiO3/Pt cells , 2011 .
[12] M. Nolan. Charge Compensation and Ce3+ Formation in Trivalent Doping of the CeO2(110) Surface: The Key Role of Dopant Ionic Radius , 2011 .
[13] L. Goux,et al. Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells , 2010 .
[14] K. Yong,et al. Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films , 2010 .
[15] Bias temperature instability of binary oxide based ReRAM , 2010, 2010 IEEE International Reliability Physics Symposium.
[16] Qi Liu,et al. Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications , 2010, Nanotechnology.
[17] L. Goux,et al. Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers , 2010 .
[18] Qi Liu,et al. Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions , 2009, IEEE Electron Device Letters.
[19] Frederick T. Chen,et al. Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals , 2009 .
[20] R. Dittmann,et al. Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.
[21] M. Haemori,et al. Impact of Cu Electrode on Switching Behavior in a Cu/HfO2/Pt Structure and Resultant Cu Ion Diffusion , 2009 .
[22] R. Waser,et al. Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories , 2009 .
[23] D. Ielmini,et al. Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices , 2009, IEEE Transactions on Electron Devices.
[24] S. Guha,et al. Space-charge-limited conduction in ethyl–hexyl substituted polyfluorene , 2009 .
[25] Byung Joon Choi,et al. Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes , 2006 .
[26] M. S. Singh. Electrical conduction and trapping distributions in tellurium oxide films. , 1988, Physical review. B, Condensed matter.