Design of Step-Down Broadband and Low-Loss Ruthroff-Type Baluns Using IPD Technology

Ruthroff-type transmission line transformers (TLTs) and baluns prevail over their broadband and low-loss performance. A typical Ruthroff-type balun with a 1:4 step-up impedance transformation ratio was successfully presented using integrated passive devices (IPDs) process. Moreover, two proposed baluns with step-down impedance transformation ratios of 1:1 and 9:4 were developed by modifying the combination of one Ruthroff-type TLT and one Ruthroff-type balun. The two proposed impedance step-down baluns whose balanced impedance is lower than unbalanced impedance make Ruthroff-type balun more flexible for applications; meanwhile, fabricating the baluns using IPD process can help to enhance the low-loss performance. The measured results show that the proposed 1:1 balun exhibits an insertion loss of 0.46 dB with 1-dB fractional bandwidth of 138.9%, and the proposed 9:4 balun exhibits an insertion loss of 0.75 dB with 1-dB fractional bandwidth of 72.4%. The chip areas of the proposed 1:1 and 9:4 baluns, including the pads, are 0.6 and 0.64 mm2, respectively. The two proposed baluns are the first on-chip step-down Ruthroff-type baluns and having an option of center tap, which is highly contributive to wideband and high-efficiency power amplifier design.

[1]  C. L. Ruthroff Some Broad-Band Transformers , 1959, Proceedings of the IRE.

[2]  Hwann-Kaeo Chiou,et al.  Broadband and Low-Loss 1 : 9 Transmission-Line Transformer in 0.18- $\mu\hbox{m}$ CMOS Process , 2010, IEEE Electron Device Letters.

[3]  J.E. Post Analysis and Design of Planar, Spiral-Shaped, Transmission-Line Transformers , 2007, IEEE Transactions on Advanced Packaging.

[4]  Chen-Chao Wang,et al.  Optimum Design of Transformer-Type Marchand Balun Using Scalable Integrated Passive Device Technology , 2012, IEEE Transactions on Components, Packaging and Manufacturing Technology.

[5]  S. Demir,et al.  High-Power 20-100-MHz Linear and Efficient Power-Amplifier Design , 2008, IEEE Transactions on Microwave Theory and Techniques.

[6]  W. Blocker The behavior of the wide-band transmission-line transformer for nonoptimum line impedance , 1978, Proceedings of the IEEE.

[7]  Hwann-Kaeo Chiou,et al.  2.5-7 ghz single balanced mixer with integrated ruthroff-type balun in 0.18 μm cmos technology , 2013 .

[8]  Jerry Sevick,et al.  A Simplified Analysis of the Broadband Transmission Line Transformer , 2004 .

[9]  E. Rotholz Transmission-Line Transformers , 1981 .

[10]  E. Marquez-Segura,et al.  Analysis and Design Procedure of Transmission-Line Transformers , 2008, IEEE Transactions on Microwave Theory and Techniques.

[11]  Yicheng Lu,et al.  A silicon monolithic spiral transmission line balun with symmetrical design , 1999, IEEE Electron Device Letters.

[12]  S.C. Cripps Cultural Transformation [Microwave Bytes] , 2009, IEEE Microwave Magazine.

[13]  Da-Chiang Chang,et al.  Broadband and High-Efficiency Power Amplifier That Integrates CMOS and IPD Technology , 2013, IEEE Transactions on Components, Packaging and Manufacturing Technology.

[14]  Shih-Ping Liu Planar transmission line transformer using coupled microstrip lines , 1998, IMS 1998.

[15]  Michael J. Lancaster,et al.  A novel superconducting CPW slow‐wave bandpass filter , 2002 .

[16]  --------------------------------- NEW METHOD OF IMPEDANCE MATCHING IN RADIO ~ FREQUENCY CIRCUITS , 2022 .

[17]  Andrei Grebennikov,et al.  Power Combiners, Impedance Transformers and Directional Couplers , 2007 .

[18]  G. Boeck Modeling and design of multilayer transmission line transformers and baluns , 2005, SBMO/IEEE MTT-S International Conference on Microwave and Optoelectronics, 2005..

[19]  Songcheol Hong,et al.  A Quasi-Four-Pair Class-E CMOS RF Power Amplifier With an Integrated Passive Device Transformer , 2009, IEEE Transactions on Microwave Theory and Techniques.

[20]  M. Engels,et al.  Design methodology, measurement and application of MMIC transmission line transformers , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.

[21]  Yicheng Lu,et al.  Spiral transmission-line baluns for RF multichip module packages , 1999 .

[22]  J. V. Nierop Evolution of a 4:1 impedance transforming balun , 1982 .

[23]  C. Trask Transmission Line Transformers: Theory, Design and Applications — Part 1 , 2005 .

[24]  I. D. Robertson,et al.  Ruthroff Transmission Line Transformers using Multilayer Technology , 2003, 2003 33rd European Microwave Conference, 2003.

[25]  Chien-Hsiang Huang,et al.  The high balance symmetric balun for WLAN and WiMAX application using the Integrated Passive Device (IPD) technology , 2009, 2009 International Conference on Electronic Packaging Technology & High Density Packaging.

[26]  I. Bahl,et al.  Broadband and compact impedance transformers for microwave circuits , 2006, IEEE Microwave Magazine.

[27]  Kyu-Pyung Hwang,et al.  RF balun embedded in multilayer organic substrate , 2007 .

[28]  Da-Chiang Chang,et al.  Broadband and low-loss Ruthroff-type transmission line transformer in integrated passive devices technology , 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.