Effect of piezoelectric field on carrier dynamics in InGaN-based solar cells

To understand the effect of piezoelectric fields on carrier dynamics, we numerically investigated a simple p-GaN/i-/n-GaN solar cell structure. A reliable simulation model was obtained by comparing the experimental and simulated results in advance. The same p–i–n InGaN structures were re-simulated with and without the piezoelectric field effect, as spontaneous polarization remained unchanged. The sample with the piezoelectric field effect showed higher short current density (), a staircase-like feature in its I–V curve, and higher open circuit voltage () with a lower fill factor (F.F.) and reduced conversion efficiency (C.E.) than the sample with no piezoelectric fields. In addition, with increasing In fraction (x), the value gradually increased while the value significantly decreased, correspondingly leading to a reduction in C.E. and F.F. values of the structure with the piezoelectric field effect. To solve the current loss problem, we applied various piezoelectric field elimination techniques to the simulated structures.

[1]  A. Carlo,et al.  EFFECTS OF MACROSCOPIC POLARIZATION IN III-V NITRIDE MULTIPLE QUANTUM WELLS , 1999, cond-mat/9905186.

[2]  Motoaki Iwaya,et al.  Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate , 2010 .

[3]  Takayuki Sota,et al.  First-principles study on electronic and elastic properties of BN, AlN, and GaN , 1998 .

[4]  S. Nakamura,et al.  Strain-induced polarization in wurtzite III-nitride semipolar layers , 2006 .

[5]  Andreas W. Bett,et al.  Simulating single‐junction GaAs solar cells including photon recycling , 2006 .

[6]  A.-B. Chen,et al.  Theory of AlN, GaN, InN and their alloys , 1997 .

[7]  Shuji Nakamura,et al.  The Blue Laser Diode: GaN based Light Emitters and Lasers , 1997 .

[8]  O. Ambacher,et al.  Determination of the composition of InxGa1−xN from strain measurements , 2009 .

[9]  David Vanderbilt,et al.  Spontaneous polarization and piezoelectric constants of III-V nitrides , 1997 .

[10]  A. D. Vos,et al.  Endoreversible thermodynamics of solar energy conversion , 1992 .

[11]  T. Moustakas,et al.  Thermal expansion of gallium nitride , 1994 .

[12]  Oliver Ambacher,et al.  Growth and applications of Group III-nitrides , 1998 .

[13]  Yoshiki Saito,et al.  RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys , 2003 .

[14]  Isamu Akasaki,et al.  Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters , 1997 .

[15]  Wei Liu,et al.  Enhanced luminescence efficiency due to carrier localization in InGaN∕GaN heterostructures grown on nanoporous GaN templates , 2008 .

[16]  S. Chua,et al.  Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire , 2007 .

[17]  James S. Speck,et al.  Effect of doping and polarization on carrier collection in InGaN quantum well solar cells , 2011 .

[18]  Eugene E. Haller,et al.  Unusual properties of the fundamental band gap of InN , 2002 .

[19]  Ian T. Ferguson,et al.  Design and characterization of GaN∕InGaN solar cells , 2007 .

[20]  Jerry R. Meyer,et al.  Band parameters for nitrogen-containing semiconductors , 2003 .