Preparation of TiO2-anatase film on Si(001) substrate with TiN and SrTiO3 as buffer layers

An epitaxial TiO2-anatase thin film was grown on the Si(001) substrate with SrTiO3/TiN as the buffer layers by the pulsed laser deposition technique under an oxygen gas supply. The typical thicknesses of TiO2-anatase, SrTiO3 and TiN layers were 760 nm, 450 nm and 230 nm, respectively. The characterization of the epitaxial TiO2-anatase film was performed using the x-ray diffraction method. The crystallographic relationships between the TiO2-anatase film and SrTiO3/TiN buffer layers were analysed by the θ-2θ scan and pole figure measurement. The growth direction of the films was determined as TiO2001/SrTiO3001/TiN001/Si001 and their in-plane relationship TiO2{110}||SrTiO3{100}||TiN{100}||Si{100}. The crystalline quality of TiO2-anatase was examined by the rocking curve analysis. The composition of the thin film packaging was characterized by Rutherford backscattering spectrometry (RBS) using a 2.0 MeV 4He beam. The simulation of the RBS data points to the possible intermixing of Ti (from TiN) and Si.

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