Infrared single wavelength gas composition monitoring for metalorganic vapour-phase epitaxy
暂无分享,去创建一个
S. P. Watkins | T. Pinnington | P. J. Walker | N. J. Mason | N. Mason | R. Nicholas | J. Hu | S. Watkins | Robin J. Nicholas | J. Hu | P. Yeo | P. Walker | P. Yeo | M. Kluth | T. Pinnington | M. Kluth
[1] R. M. Biefeld,et al. In situ measurement of the metalorganic and hydride partial pressures in a MOCVD reactor using ultraviolet absorption spectroscopy , 1989 .
[2] J. Butler,et al. An ultra-fast gas delivery system for producing abrupt compositional switching in OMVPE , 1986 .
[3] Roy S. Smith,et al. Control of III-V epitaxy in a metalorganic chemical vapor deposition process : impact of source flow control on composition and thickness , 1996 .
[4] N. Mason,et al. Factors influencing doping control and abrupt metallurgical transitions during atmospheric pressure MOVPE growth of AlGaAs and GaAs , 1984 .
[5] J. P. Stagg,et al. Measurement and control of reagent concentrations in MOCVD reactor using ultrasonics , 1992 .
[7] J. Butler,et al. In situ, real-time diagnostics of OMVPE using IR-diode laser spectroscopy☆ , 1986 .
[8] K. Lau,et al. Improvement of gas-switching abruptness for atmospheric pressure organometallic vapor phase epitaxy , 1994 .
[9] N. Mason,et al. Influence of gas mixing and expansion in horizontal MOVPE reactors , 1991 .