Low-energy O+ ion beam induced chemical vapor deposition using tetraethyl orthosilicate for silicon dioxide film formation

[1]  M. Kiuchi,et al.  Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films , 2021, PloS one.

[2]  M. Kiuchi,et al.  Identification of fragment ions produced by the decomposition of tetramethyltin and the production of low-energy Sn+ ion beam , 2021, PloS one.

[3]  M. Kiuchi,et al.  Production of low-energy SiCH3+ and SiC2H7+ ion beams for 3C-SiC film formation by selecting fragment ions from dimethylsilane , 2021 .

[4]  M. Kiuchi,et al.  Production of low-energy fragment-ion beams from hexamethyldisiloxane and the irradiation of SiO+ ion beam to substrates with supplemental oxygen gas for SiO2 film formation , 2020 .

[5]  M. Kiuchi,et al.  Characteristics of films deposited by the irradiation of GeCHx+ ions produced from hexamethyldigermane and their dependence on the injected ion energy , 2019 .

[6]  M. Kiuchi,et al.  Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane , 2019, AIP Advances.

[7]  M. Kiuchi,et al.  Effects of injected ion energy on silicon carbide film formation by low-energy SiCH3+ beam irradiation , 2019, Thin Solid Films.

[8]  M. Kiuchi,et al.  Low-energy mass-selected ion beam production of fragments from tetraethylorthosilicate for the formation of silicon dioxide film , 2018 .

[9]  M. Kiuchi,et al.  Injected ion energy dependence of SiC film deposited by low-energy SiC 3 H 9 + ion beam produced from hexamethyldisilane , 2018 .

[10]  M. Kiuchi,et al.  Low-energy mass-selected ion beam production of fragments produced from hexamethyldisiloxane for the formation of silicon oxide film , 2017 .

[11]  M. Kiuchi,et al.  Low-energy SiC2H6+ and SiC3H9+ ion beam productions by the mass-selection of fragments produced from hexamethyldisilane for SiC film formations , 2016 .

[12]  M. Kiuchi,et al.  Low-Energy Mass-Selected Ion Beam Production of Fragments Produced from Hexamethyldisilane for SiC Film Formation , 2016 .

[13]  S. Sugimoto,et al.  Application of Ion Beam Induced Chemical Vapor Deposition for SiC Film Formation on Si Substrates using Methylsilane , 2015 .

[14]  B. Shokri,et al.  The effect of TEOS plasma parameters on the silicon dioxide deposition mechanisms , 2013 .

[15]  M. Kiuchi,et al.  Sputtering yields and surface modification of poly(methyl methacrylate) (PMMA) by low-energy Ar+/ ion bombardment with vacuum ultraviolet (VUV) photon irradiation , 2012 .

[16]  M. Nishitani,et al.  Experimental evaluation of CaO, SrO and BaO sputtering yields by Ne+ or Xe+ ions , 2011 .

[17]  G. Cao,et al.  Characteristics of silicon oxide thin films prepared by sol electrophoretic deposition method using tetraethylorthosilicate as the precursor , 2009 .

[18]  N. Miyatake,et al.  Characteristics of monopole antenna plasmas for TEOS PECVD , 2008 .

[19]  Shinji Matsui,et al.  Focused-ion-beam deposition for 3-D nanostructure fabrication , 2007 .

[20]  M. Kiuchi,et al.  Fragment Ions of Dimethylsilane Produced by Hot Tungsten Wires , 2006 .

[21]  E. Amanatides,et al.  RF power effect on TEOS/O2 PECVD of silicon oxide thin films , 2005 .

[22]  Takao Suzuki,et al.  Ion-beam-induced chemical-vapor deposition of FePt and CoPt particles , 2005 .

[23]  Takaomi Matsutani,et al.  Deposition of SiO2 films by low-energy ion-beam induced chemical vapor deposition using hexamethyldisiloxane , 2004 .

[24]  M. Kiuchi,et al.  Ion beam-induced chemical vapor deposition with hexamethyldisilane for hydrogenated amorphous silicon carbide and silicon carbonitride films , 2003 .

[25]  M. Pérez-Sánchez,et al.  Corrosion resistant ZrO2 thin films prepared at room temperature by ion beam induced chemical vapour deposition , 2002 .

[26]  M. T. Kim.  Deposition kinetics of silicon dioxide from tetraethylorthosilicate by PECVD , 2000 .

[27]  H. D. Banerjee,et al.  Electron cyclotron resonance (ECR) plasma-enhanced chemical vapour deposition of silicon dioxide on strained-SiGe films using tetraethylorthosilicate , 1998 .

[28]  Giovanni Carlotti,et al.  Elastic properties of silicon dioxide films deposited by chemical vapour deposition from tetraethylorthosilicate , 1997 .

[29]  J. Shallenberger.  Determination of chemistry and microstructure in SiOx (0.1 , 1996 .

[30]  Y. Yamamura,et al.  ENERGY DEPENDENCE OF ION-INDUCED SPUTTERING YIELDS FROM MONATOMIC SOLIDS AT NORMAL INCIDENCE , 1996 .

[31]  Paul A. Kohl,et al.  Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Deposited at Low Temperatures , 1995 .

[32]  J. P. Espinós,et al.  Preparation of TiO2 and Al2O3 thin films by ion-beam induced chemical vapour deposition , 1994 .

[33]  J. P. Espinós,et al.  Ion beam induced chemical vapor deposition for the preparation of thin film oxides , 1994 .

[34]  K. Okuyama,et al.  Gas-Phase Nucleation in an Atmospheric Pressure Chemical Vapor Deposition Process for SiO2 Films Using Tetraethylorthosilicate (TEOS) , 1992 .

[35]  C. Pai,et al.  Ion and chemical radical effects on the step coverage of plasma enhanced chemical vapor deposition tetraethylorthosilicate films , 1990 .

[36]  Franz J. Himpsel,et al.  Probing the transition layer at the SiO2‐Si interface using core level photoemission , 1984 .