Qualitative Analysis of CMOS Logic Full Adder and GDI Logic Full Adder using 18 nm FinFET Technology

In this paper we qualitatively analysed basic full adder circuitry, which is implemented using CMOS technology (28T) and GDI technique (10T) using 18nm FinFET technology. The primary objective is to optimize our conventional adder so that an experimental analysis is conducted in order to analyse these two distinct circuits with same operation in terms of Area, Propagation Delay, Power and Power-Delay-Product (PDP). All experimental analysis is carried using Cadence Virtuoso (cds-ff-mpt library is used for FinFET).

[1]  Israel A. Wagner,et al.  Gate-diffusion input (GDI): a power-efficient method for digital combinatorial circuits , 2002, IEEE Trans. Very Large Scale Integr. Syst..

[2]  Michael Loong Peng Tan,et al.  Design and implementation of a 1-bit FinFET Full Adder cell for ALU in subthreshold region , 2014, 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014).

[3]  Lucky Agarwal,et al.  Short channel effects (SCEs) characterization of underlaped dual-K spacer in dual-metal gate FinFET device , 2016, 2016 International Conference on Control, Computing, Communication and Materials (ICCCCM).