THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs

Significant difference in temporal and spectral characteristics of THz radiation emitted by large- (1mm) and small- (5micrometers ) aperture dipole antennas fabricated on arsenic-ion-implanted GaAs and undoped semi-insulating GaAs is reported and attributed to the geometry of the antenna.