Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes

We report modulation bandwidth measurements on a number of InGaN-based quantum well LEDs emitting at 450 and 520 nm wavelengths. It is shown that for these devices the data can be interpreted in terms of Auger recombination, by taking account of the carrier density dependence of the radiative coefficient. We find values for the Auger coefficient of (1±0.3)×10−29cm6s−1 at 450 nm and (3±1)×10−30cm6s−1 at 520 nm.

[1]  Pleun Maaskant,et al.  200 Mbit/s data transmission through 100 m of plastic optical fibre with nitride LEDs , 2002 .

[2]  B. Hahn,et al.  A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes , 2009 .

[3]  Zheng Gong,et al.  A Vertically Integrated CMOS Microsystem for Time-Resolved Fluorescence Analysis , 2010, IEEE Transactions on Biomedical Circuits and Systems.

[4]  M. Goano,et al.  A numerical study of Auger recombination in bulk InGaN , 2010 .

[5]  Frank Stern,et al.  Calculated spectral dependence of gain in excited GaAs , 1976 .

[6]  H. Kuo,et al.  Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates , 2006, IEEE Photonics Technology Letters.

[7]  G. Simin,et al.  Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm , 2002 .

[8]  Ching-Cherng Sun,et al.  Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate. , 2007, Optics express.

[9]  E. Schubert.  LED modulation characteristics , 2006 .

[10]  Niloy K. Dutta,et al.  Long wavelength semiconductor lasers , 1988, Technical Digest., International Electron Devices Meeting.

[11]  H. Morkoç,et al.  On carrier spillover in c- and m-plane InGaN light emitting diodes , 2009 .

[12]  Wolfgang G. Scheibenzuber,et al.  Recombination coefficients of GaN-based laser diodes , 2011 .

[13]  A. David,et al.  Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis , 2010 .

[14]  Michael R. Krames,et al.  Auger recombination in InGaN measured by photoluminescence , 2007 .

[15]  Yong-Hee Lee,et al.  DETERMINATION OF NONRADIATIVE RECOMBINATION COEFFICIENTS OF VERTICAL-CAVITY SURFACE-EMITTING LASERS FROM LATERAL SPONTANEOUS EMISSION , 1995 .

[16]  K. Delaney,et al.  Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes , 2011 .

[17]  M.H. Crawford,et al.  LEDs for Solid-State Lighting: Performance Challenges and Recent Advances , 2009, IEEE Journal of Selected Topics in Quantum Electronics.

[18]  Han-Youl Ryu,et al.  Rate equation analysis of efficiency droop in InGaN light-emitting diodes , 2009 .

[19]  M. Dawson,et al.  High-Speed Visible Light Communications Using Individual Pixels in a Micro Light-Emitting Diode Array , 2010, IEEE Photonics Technology Letters.

[20]  M. Dawson,et al.  Visible-Light Communications Using a CMOS-Controlled Micro-Light- Emitting-Diode Array , 2012, Journal of Lightwave Technology.

[21]  G. Thompson.  Reply: Analysis of radiative and nonradiative recombination law in lightly doped InGaAsP lasers , 1983 .

[22]  Petr G. Eliseev,et al.  Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells , 1999 .

[23]  Meng Zhang,et al.  Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes , 2009 .

[24]  K. Delaney,et al.  Auger recombination rates in nitrides from first principles , 2009, 0904.3559.

[25]  Seong-Ju Park,et al.  Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface , 2003 .

[26]  R. I. Gorbunov,et al.  Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes , 2010 .

[27]  Juncheng Cao,et al.  Many-body interaction in resonant tunneling of terahertz quantum cascade lasers , 2010 .

[28]  E. Fred Schubert,et al.  Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes , 2010 .

[29]  Peter Blood,et al.  Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm , 2003, Applied Physics Letters.

[30]  B. Hahn,et al.  High-Power and High-Efficiency InGaN-Based Light Emitters , 2010, IEEE Transactions on Electron Devices.

[31]  E. Fred Schubert,et al.  Origin of efficiency droop in GaN-based light-emitting diodes , 2007 .

[32]  Bo E. Sernelius,et al.  Defect related issues in the current roll-off in InGaN based light emitting diodes , 2007 .