论文信息 - Stress in thermal SiO2 during growth

Stress in thermal SiO2 during growth

Stress present in thermal SiO2 at temperatures during growth in wet O2 has been measured as a function of growth temperature. During growth at 950 °C and below, compressive stress on the order of 7×109 dyn/cm2 is generated in the SiO2. During growth at 975 and 1000 °C, the SiO2 grows in a stress‐free state. The results, which are consistent with a viscous flow point somewhere between 950 and 975 °C, are of value in avoiding mechanical failure effects in integrated‐circuit processing.

E. P. EerNisse | E. P. Eernisse

[1] A. Bohg,et al. Influence of film stress and thermal oxidation on the generation of dislocations in silicon , 1978 .

[2] H. Miyoshi,et al. Selective Oxidation of Silicon in High Pressure Steam , 1978 .

[3] S. Hu. Temperature dependence of critical stress in oxygen‐free silicon , 1978 .

[4] E. P. EerNisse,et al. Viscous flow of thermal SiO2 , 1977 .

[5] E. P. EerNisse,et al. Viscous Shear Flow Model for MOS Device Radiation Sensitivity , 1976, IEEE Transactions on Nuclear Science.

[6] J. R. Patel,et al. X‐ray diffraction topographs of silicon crystals with superposed oxide film. II. Pendellösung fringes: comparison of experiment with theory , 1973 .

[7] B. L. Gregory,et al. Process Optimization of Radiation-Hardened CMOS Integrated Circuits , 1975, IEEE Transactions on Nuclear Science.