0.248/spl mu/m/sup 2/ and 0.334/spl mu/m/sup 2/ conventional bulk 6T-SRAM bit-cells for 45nm node low cost - general purpose applications

This work highlights the realization and 0.248/spl mu/m/sup 2/ to 0.334/spl mu/m/sup 2/ SRAM bit-cells with conventional bulk technology based on 19/spl Aring/ CET SiON gate oxide, poly-silicon gate electrode, and mobility enhancement techniques for both nMOS and pMOS. High density critical lithography levels have been exposed with e-beam direct writing thus contributing to the overall cost-effectiveness of the technology.