An overview of flash architectural developments

This paper presents a survey of the principal architectures and blocks building up a flash memory, describing how these blocks are designed and how their design has changed over the years to satisfy the new specification requests. For example, the continuous supply voltage reduction aimed at portable electronic solutions has forced designers to find innovative design solutions. An overview of the test modes developed for the flash device not only to debug the chip but also to try to improve reliability is given. Ad hoc test modes are useful to deeply increase the analysis capability. Finally, the test methodology for flash memories, a challenge between the test time reduction and better test coverage, is presented.

[1]  G. Torelli,et al.  40-mm/sup 2/ 3-V-only 50-MHz 64-Mb 2-b/cell CHE NOR flash memory , 2000, IEEE Journal of Solid-State Circuits.

[2]  S.T. Wang On the I-V characteristics of floating-gate MOS transistors , 1979, IEEE Transactions on Electron Devices.

[3]  G. Atwood,et al.  Erratic Erase In ETOX/sup TM/ Flash Memory Array , 1993, Symposium 1993 on VLSI Technology.

[4]  Piero Olivo,et al.  Flash memory cells-an overview , 1997, Proc. IEEE.

[5]  M. Van Buskirk,et al.  A 55 ns 0.35 /spl mu/m 5 V-only 16 M flash memory with deep-power-down , 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.

[6]  T. Hayashida,et al.  A flash-erase EEPROM cell with an asymmetric source and drain structure , 1987, 1987 International Electron Devices Meeting.

[7]  H. B. Bakoglu,et al.  Circuits, interconnections, and packaging for VLSI , 1990 .

[8]  Luca Crippa,et al.  Modular architecture for a family of multilevel 256/192/128/64 Mbit 2-bit/cell 3 V-only NOR flash memory devices , 2001, ICECS 2001. 8th IEEE International Conference on Electronics, Circuits and Systems (Cat. No.01EX483).

[9]  R. Bez,et al.  A 20 MB/s data rate 2.5 V flash memory with current-controlled field erasing for 1 M cycle endurance , 1997, 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers.

[10]  T. Tanzawa,et al.  A dynamic analysis of the Dickson charge pump circuit , 1997, IEEE J. Solid State Circuits.

[11]  Y. Igura,et al.  New device degradation due to 'cold' carriers created by band-to-band tunneling , 1989, IEEE Electron Device Letters.

[12]  Jieh-Tsorng Wu,et al.  MOS charge pumps for low-voltage operation , 1998, IEEE J. Solid State Circuits.

[13]  Masamitsu Oshikiri,et al.  A self-convergence erasing scheme for a simple stacked gate flash EEPROM , 1991, International Electron Devices Meeting 1991 [Technical Digest].

[14]  Brian L. Dipert,et al.  Designing with flash memory , 1993 .

[15]  Roberto Canegallo,et al.  Flash-based programmable nonlinear capacitor for switched-capacitor implementations of neural networks , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[16]  M. Gill,et al.  A 5 V-only 256 kbit CMOS flash EEPROM , 1989, IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers.

[17]  M. Lanzoni,et al.  Nonvolatile multilevel memories for digital applications , 1998, Proc. IEEE.

[18]  Carla Golla,et al.  Flash Memories , 1999 .

[19]  G Campardo,et al.  Architecture of non volatile memory with multi-bit cells , 2001 .

[20]  A. Brand,et al.  Novel read disturb failure mechanism induced by FLASH cycling , 1993, 31st Annual Proceedings Reliability Physics 1993.

[21]  M. Lenzlinger,et al.  Fowler‐Nordheim Tunneling into Thermally Grown SiO2 , 1969 .

[22]  C. Fiocchi,et al.  Program load adaptive voltage generator for flash memories , 1997 .

[23]  R. Bez,et al.  A 40 mm/sup 2/ 3 V 50 MHz 64 Mb 4-level cell NOR-type flash memory , 2000, 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).

[24]  J. F. Dickson,et al.  On-chip high-voltage generation in MNOS integrated circuits using an improved voltage multiplier technique , 1976 .

[25]  M. Ushiyama,et al.  Read-disturb degradation mechanism due to electron trapping in the tunnel oxide for low-voltage flash memories , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[26]  S. Yamada,et al.  A 5-V-only operation 0.6- mu m flash EEPROM with row decoder scheme in triple-well structure , 1992 .

[27]  Roberto Bez,et al.  Failure mechanisms of flash cell in program/erase cycling , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[28]  T. Sato,et al.  A 5-V-only 16-Mb flash memory with sector erase mode , 1992 .

[29]  G. Verma,et al.  Reliability performance of ETOX based flash memories , 1988 .

[30]  G. Sery,et al.  Physical origin of long-term charge loss in floating-gate EPROM with an interpoly oxide-nitride-oxide stacked dielectric , 1991, IEEE Electron Device Letters.

[31]  Betty Prince Semiconductor Memories: A Handbook of Design, Manufacture and Application , 1992 .

[32]  Tsutomu Yoshihara,et al.  A 3.3 V-only 16 Mb DINOR flash memory , 1995, Proceedings ISSCC '95 - International Solid-State Circuits Conference.

[33]  Shinichi Kobayashi,et al.  A 60-ns 16-Mb flash EEPROM with program and erase sequence controller , 1991 .

[34]  Shinichi Kobayashi,et al.  A new erasing and row decoding scheme for low supply voltage operation 16-Mb/64-Mb flash memories , 1992 .

[35]  Guido Torelli,et al.  Hierarchical sector biasing organization for flash memories , 2000, Records of the IEEE International Workshop on Memory Technology, Design and Testing.