An overview of flash architectural developments
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[1] G. Torelli,et al. 40-mm/sup 2/ 3-V-only 50-MHz 64-Mb 2-b/cell CHE NOR flash memory , 2000, IEEE Journal of Solid-State Circuits.
[2] S.T. Wang. On the I-V characteristics of floating-gate MOS transistors , 1979, IEEE Transactions on Electron Devices.
[3] G. Atwood,et al. Erratic Erase In ETOX/sup TM/ Flash Memory Array , 1993, Symposium 1993 on VLSI Technology.
[4] Piero Olivo,et al. Flash memory cells-an overview , 1997, Proc. IEEE.
[5] M. Van Buskirk,et al. A 55 ns 0.35 /spl mu/m 5 V-only 16 M flash memory with deep-power-down , 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.
[6] T. Hayashida,et al. A flash-erase EEPROM cell with an asymmetric source and drain structure , 1987, 1987 International Electron Devices Meeting.
[7] H. B. Bakoglu,et al. Circuits, interconnections, and packaging for VLSI , 1990 .
[8] Luca Crippa,et al. Modular architecture for a family of multilevel 256/192/128/64 Mbit 2-bit/cell 3 V-only NOR flash memory devices , 2001, ICECS 2001. 8th IEEE International Conference on Electronics, Circuits and Systems (Cat. No.01EX483).
[9] R. Bez,et al. A 20 MB/s data rate 2.5 V flash memory with current-controlled field erasing for 1 M cycle endurance , 1997, 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers.
[10] T. Tanzawa,et al. A dynamic analysis of the Dickson charge pump circuit , 1997, IEEE J. Solid State Circuits.
[11] Y. Igura,et al. New device degradation due to 'cold' carriers created by band-to-band tunneling , 1989, IEEE Electron Device Letters.
[12] Jieh-Tsorng Wu,et al. MOS charge pumps for low-voltage operation , 1998, IEEE J. Solid State Circuits.
[13] Masamitsu Oshikiri,et al. A self-convergence erasing scheme for a simple stacked gate flash EEPROM , 1991, International Electron Devices Meeting 1991 [Technical Digest].
[14] Brian L. Dipert,et al. Designing with flash memory , 1993 .
[15] Roberto Canegallo,et al. Flash-based programmable nonlinear capacitor for switched-capacitor implementations of neural networks , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.
[16] M. Gill,et al. A 5 V-only 256 kbit CMOS flash EEPROM , 1989, IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers.
[17] M. Lanzoni,et al. Nonvolatile multilevel memories for digital applications , 1998, Proc. IEEE.
[18] Carla Golla,et al. Flash Memories , 1999 .
[19] G Campardo,et al. Architecture of non volatile memory with multi-bit cells , 2001 .
[20] A. Brand,et al. Novel read disturb failure mechanism induced by FLASH cycling , 1993, 31st Annual Proceedings Reliability Physics 1993.
[21] M. Lenzlinger,et al. Fowler‐Nordheim Tunneling into Thermally Grown SiO2 , 1969 .
[22] C. Fiocchi,et al. Program load adaptive voltage generator for flash memories , 1997 .
[23] R. Bez,et al. A 40 mm/sup 2/ 3 V 50 MHz 64 Mb 4-level cell NOR-type flash memory , 2000, 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).
[24] J. F. Dickson,et al. On-chip high-voltage generation in MNOS integrated circuits using an improved voltage multiplier technique , 1976 .
[25] M. Ushiyama,et al. Read-disturb degradation mechanism due to electron trapping in the tunnel oxide for low-voltage flash memories , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.
[26] S. Yamada,et al. A 5-V-only operation 0.6- mu m flash EEPROM with row decoder scheme in triple-well structure , 1992 .
[27] Roberto Bez,et al. Failure mechanisms of flash cell in program/erase cycling , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.
[28] T. Sato,et al. A 5-V-only 16-Mb flash memory with sector erase mode , 1992 .
[29] G. Verma,et al. Reliability performance of ETOX based flash memories , 1988 .
[30] G. Sery,et al. Physical origin of long-term charge loss in floating-gate EPROM with an interpoly oxide-nitride-oxide stacked dielectric , 1991, IEEE Electron Device Letters.
[31] Betty Prince. Semiconductor Memories: A Handbook of Design, Manufacture and Application , 1992 .
[32] Tsutomu Yoshihara,et al. A 3.3 V-only 16 Mb DINOR flash memory , 1995, Proceedings ISSCC '95 - International Solid-State Circuits Conference.
[33] Shinichi Kobayashi,et al. A 60-ns 16-Mb flash EEPROM with program and erase sequence controller , 1991 .
[34] Shinichi Kobayashi,et al. A new erasing and row decoding scheme for low supply voltage operation 16-Mb/64-Mb flash memories , 1992 .
[35] Guido Torelli,et al. Hierarchical sector biasing organization for flash memories , 2000, Records of the IEEE International Workshop on Memory Technology, Design and Testing.