论文信息 - Floating gate based ultra-high-sensitivity two-terminal AlGaN/GaN HEMT hydrogen sensor

Floating gate based ultra-high-sensitivity two-terminal AlGaN/GaN HEMT hydrogen sensor

This paper presents the analytical performances of an AlGaN/GaN High Electron Mobility Transistor (HEMT) based sensor for the detection of H2 gas. The model calculates the changes in drain-to-source current and sensitivity of the device due to adsorbed atomic density of gas at the gate terminal. Simulated results indicate that AlGaN/GaN HEMT based floating gate sensors are highly suitable for the extreme environment detection of various gases with concentration as low as ~ ppb level.

Achyut K. Dutta | Sazia A. Eliza | A. Dutta | S. A. Eliza | Sazia A. Eliza

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