Improvement of GaN plasma etching uniformity by optimizing the coil electrode with plasma simulation and experimental validation

[1]  A. Allerman,et al.  Al-rich AlGaN based transistors , 2020 .

[2]  F. Ren,et al.  Plasma etching of wide bandgap and ultrawide bandgap semiconductors , 2020 .

[3]  W. Gekelman,et al.  Three-dimensional measurements of plasma parameters in an inductively coupled plasma processing chamber , 2019, Physics of Plasmas.

[4]  L. Fu,et al.  GaN in different dimensionalities: Properties, synthesis, and applications , 2019, Materials Science and Engineering: R: Reports.

[5]  H. Osten,et al.  Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application , 2019, Applied Physics Letters.

[6]  You-nian Wang,et al.  Fluid simulation of the plasma uniformity in pulsed dual frequency inductively coupled plasma , 2019, Physics of Plasmas.

[7]  Chien-Ju Chen,et al.  Fabrication and Characterization of Active-Matrix $960\times540$ Blue GaN-Based Micro-LED Display , 2019, IEEE Journal of Quantum Electronics.

[8]  H. Okumura.  Fabrication of an AlN ridge structure using inductively coupled Cl2/BCl3 plasma and a TMAH solution , 2019, Japanese Journal of Applied Physics.

[9]  Alex Q. Huang,et al.  The 2018 GaN power electronics roadmap , 2018, Journal of Physics D: Applied Physics.

[10]  J. Tennyson,et al.  Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF3/O2 mixtures , 2018 .

[11]  Gang Wang,et al.  Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model , 2018, Royal Society Open Science.

[12]  J. Joo.  Numerical Simulation: Effects of Gas Flow and Rf Current Direction on Plasma Uniformity in an ICP Dry Etcher , 2017 .

[13]  J. Jeon,et al.  Two-Dimensional Fluid Simulation of Large-Scale, Capacitively-Coupled Plasma Discharge for Display Device Processes , 2017 .

[14]  S. Rauf,et al.  Modeling of low pressure plasma sources for microelectronics fabrication , 2017 .

[15]  E. Gogolides,et al.  Comparison of Helical and Helicon Antennas as Sources of Plasma Excitation Using a Full Wave 3D Electromagnetic Analysis in Vacuum , 2017 .

[16]  H. Choe,et al.  Fluid simulation of a pulse-modulated, inductively coupled plasma discharge with radio frequency bias , 2017 .

[17]  M. Hori,et al.  Investigation of effects of ion energies on both plasma-induced damage and surface morphologies and optimization of high-temperature Cl2 plasma etching of GaN , 2017 .

[18]  M. Kushner,et al.  Controlling VUV photon fluxes in pulsed inductively coupled Ar/Cl2 plasmas and potential applications in plasma etching , 2017 .

[19]  U. Fantz,et al.  Comparison of the B field dependency of plasma parameters of a weakly magnetized inductive and Helicon hydrogen discharge , 2016 .

[20]  Wenliang Wang,et al.  GaN-based light-emitting diodes on various substrates: a critical review , 2016, Reports on progress in physics. Physical Society.

[21]  T. Cho,et al.  Optimization of hollow cathode discharge electrode for damage free remote plasma removal process for semiconductor manufacturing , 2016 .

[22]  G. Yeom,et al.  Ion energy distributions in a pulsed dual frequency inductively coupled discharge of Ar/CF4 and effect of duty ratio , 2015 .

[23]  Wei Liu,et al.  Fluid simulation of inductively coupled Ar/O2 plasmas: Comparisons with experiment* , 2015 .

[24]  C. Chung,et al.  On uniform plasma generation for the large area plasma processing in intermediate pressures , 2015 .

[25]  C. Breitkopf,et al.  Simulation of inductively coupled plasma with applied bias voltage using COMSOL , 2014 .

[26]  Gilles Cunge,et al.  Pulsed Cl2/Ar inductively coupled plasma processing: 0D model versus experiments , 2014 .

[27]  J. Jeon,et al.  The Spatial Effects of Antenna Configuration in a Large Area Inductively Coupled Plasma System for Flat Panel Displays , 2014 .

[28]  S. Rauf,et al.  Fully Self-Consistent 3-D Modeling of Inductively Coupled Plasmas , 2014, IEEE Transactions on Plasma Science.

[29]  D. Wallis,et al.  Prospects of III-nitride optoelectronics grown on Si , 2013, Reports on progress in physics. Physical Society.

[30]  Dirk Wellekens,et al.  Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination , 2013, IEEE Electron Device Letters.

[31]  G. Yeom,et al.  Plasma Characteristics of Inductively Coupled Plasma Using Dual-Frequency Antennas , 2013 .

[32]  Gon-Ho Kim,et al.  Frequency and electrode shape effects on etch rate uniformity in a dual-frequency capacitive reactor , 2012 .

[33]  Lei Chen,et al.  Plasma etching uniformity control for making large and thick dual-focus zone plates , 2011 .

[34]  K. Rahbarnia,et al.  Study of a scalable large-area radio-frequency helicon plasma source , 2010 .

[35]  M. Dineen,et al.  Temperature control of multiple wafers during etching of 2′ sapphire wafers for patterned sapphire substrates (PSS) , 2010 .

[36]  S. Rauf,et al.  Effect of simultaneous source and bias pulsing in inductively coupled plasma etching , 2009 .

[37]  M. Kushner,et al.  Seasoning of plasma etching reactors: Ion energy distributions to walls and real-time and run-to-run control strategies , 2008 .

[38]  Werner Boullart,et al.  Simulation of an Ar/Cl2 inductively coupled plasma: study of the effect of bias, power and pressure and comparison with experiments , 2008 .

[39]  E. Antonsen,et al.  Direct current magnetic insulation of an immersed RF antenna , 2006 .

[40]  L. Deng,et al.  Batch reactive ion etching of gallium nitride using photoresist as a mask , 2004 .

[41]  M. Kushner,et al.  Properties of c-C4F8 inductively coupled plasmas. II. Plasma chemistry and reaction mechanism for modeling of Ar/c-C4F8/O2 discharges , 2004 .

[42]  C. Eddy,et al.  Characterization of Cl2/Ar high density plasmas for semiconductor etching , 1999 .

[43]  D. J. Economou.  Hybrid Simulation of Low Temperature Plasmas: A Brief Tutorial , 2017 .

[44]  J. Kwak,et al.  Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization , 2016 .

[45]  Tamotsu Hashizume,et al.  Effects of Cl2-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al2O3/AlGaN/GaN Heterostructures , 2012 .

[46]  Hugo Bender,et al.  AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility , 2011 .