论文信息 - Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's

Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's

The charge coupling between the front and back gates of thin-film silicon-on-insulator (SOI: e.g,, recrystallized Si on SiO2) MOSFET's is analyzed, and closed-form expressions for the threshold voltage under all possible steady-state conditions are derived. The expressions clearly show the dependence of the linear-region channel conductance on the back-gate bias and on the device parameters, including those of the back silicon-insulator interface. The analysis is supported by current-voltage measurements of laser-recrystallized SOI MOSFET's. The results suggest how the back-gate bias may be used to optimize the performance of the SOI MOSFET in particular applications.

Hyung-Kyu Lim | J. Fossum | Hyung-Kyu Lim

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