论文信息 - High quality AIN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy - 字舞流文

High quality AIN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy

H. Temkin | K. Hobart | V. Kuryatkov | I. Gherasoiu | S. Nikishin | M. Fatemi | M. Holtz | F. Kub | K. Choi | G. Kipshidze | T. Prokofyeva | M. Fatemi | S. Nikishin