A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics

This paper presents a comprehensive study on channel hot-carrier (CHC) degradation in short channel MOSFETs with high-k dielectric. Different reliability scenarios are analyzed, i.e., temperature influence, impact of high I"D and dynamic operation conditions. To explain the CHC damage behavior in short channel devices, we divide the total CHC degradation in two components: the classical CHC damage located at drain side and the degradation produced by the voltage drop over the gate dielectric, which can be considered as bias temperature instability (BTI).

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