Morphological instabilities on exactly oriented and on vicinal GaAs (001) surfaces during molecular beam epitaxy

[1]  P. Harrison,et al.  The simulation of single-crystal growth by molecular beam epitaxy using a kinetic rate-equation model , 1994 .

[2]  K. Shiraishi,et al.  Coverage dependence of migration potential of cation adatoms on GaAs(001)-(2 × 4) surface , 1994 .

[3]  K. Ploog,et al.  Contribution of reflection high-energy electron diffraction to nanometre tailoring of surfaces and interfaces by molecular beam epitaxy , 1994 .

[4]  H. Yamaguchi,et al.  Step Motion and Structure Transition on InAs and GaAs (001) Surfaces Observed by Scanning Tunneling Microscopy , 1994 .

[5]  X. Shen,et al.  Arsenic Pressure Dependence of Surface Diffusion of Ga on Nonplanar GaAs Substrates , 1994 .

[6]  Reuter,et al.  Step morphologies on small-miscut Si(001) surfaces. , 1993, Physical review. B, Condensed matter.

[7]  B. Joyce,et al.  As/Ga ratio dependence of Ga adatom incorporation kinetics at steps on vicinal GaAs(001) surfaces , 1993 .

[8]  G. W. Smith,et al.  Real-time laser-light scattering studies of surface topography development during GaAs MBE growth , 1993 .

[9]  Tersoff,et al.  Sinuous step instability on the Si(001) surface. , 1992, Physical review letters.

[10]  H. Benisty,et al.  Evolution of 3D growth patterns on nonplanar substrates , 1991 .

[11]  T. Isu,et al.  Surface diffusion length observed by in situ scanning microprobe reflection high-energy electron diffraction , 1991 .

[12]  Zangwill,et al.  Morphological instability of a terrace edge during step-flow growth. , 1990, Physical review. B, Condensed matter.

[13]  D. Vvedensky,et al.  Influence of surface morphology upon recovery kinetics during interrupted epitaxial growth , 1989 .

[14]  W. Tiller,et al.  Free surfaces and multilayer interfaces in the GaAs/AlAs system , 1987 .

[15]  Richard L. Schwoebel,et al.  Step Motion on Crystal Surfaces. II , 1966 .