A 27 GHz double polysilicon bipolar technology on bonded SOI with embedded 58 mu m/sup 2/ CMOS memory cells for ECL-CMOS SRAM applications
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T. Hiramoto | T. Ikeda | M. Odaka | N. Tamba | T. Hashimoto | T. Hiramoto | M. Yoshida | T. Ikeda | N. Tamba | M. Odaka | M. Yoshida | K. Watanabe | T. Hashimoto | T. Fujiwara | T. Fujiwara | M. Usami | M. Usami | K. Watanabe
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